DSS 6-015AS IFAV = 6 A VRRM = 150 V V F = 0.62 V Power Schottky Rectifier VRSM VRRM V V 150 150 Type marking A TO-252 AA C on product DSS 6-015AS A 6Y150AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5 20 6 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A EAS IAS = 1 A; L = 100 µH; TVJ = 25°C; non repetitive 0.05 mJ IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 0.1 A 18 kV/µs -55...+175 175 -55...+150 °C °C °C (dv/dt)cr TVJ TVJM Tstg Ptot TC = 25°C 50 W Weight typical 0.3 g Symbol Conditions IR TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM VF IF = 6 A; IF = 6 A; IF = 12 A; Characteristic Values typ. max. TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC 0.3 2.5 mA mA 0.62 0.78 0.71 V V V 3.0 K/W Features • • • • • International standard package Very low VF Extremely low switching losses Low IRM-values Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 428 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSS 6-015AS 100 1000 100 mA A IR IF pF TVJ=175°C 10 CT 150°C 1 125°C TVJ= 25°C 10 100 0.1 100°C TVJ = 175°C 150°C 125°C 25°C 1 0.0 0.01 75°C 50°C 0.001 25°C 10 0.0001 0.2 0.4 0.6 0.8 V 1.0 0 30 60 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 15 W 25 A d= DC 0.5 0.33 0.25 0.17 0.08 10 5 5 0 0 0 50 100 150 C 200 0 5 15 A 20 10 TC IF(AV) Fig. 4 Average forward current IF(AV) versus case temperature TC 90 120 V 150 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM 10 DC d = 0.5 60 10000 P(AV) 20 15 30 VR VF IF(AV) 0 120 V 150 90 1000 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 10 K/W ZthJC 1 D = 0.5 0.33 0.25 0.17 0.08 Single Pulse 0.1 DSS 6-015AS 0.001 0.01 0.1 1 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved s 10 Note: All curves are per diode 428 0.01 0.0001 2-2