IXYS DSS25

DSS 25-0045A
IFAV = 25 A
VRRM = 45 V
VF = 0.59 V
Power Schottky Rectifier
VRSM
VRRM
V
V
45
45
TO-220 AC
Type
A
C
C
A
DSS 25-0045A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAV
TC = 155°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
IAR
35
25
A
A
400
A
IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive
46
mJ
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
1.8
A
(dv/dt)cr
1000
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
IR

VF
-55...+175
175
-55...+150
°C
°C
°C
135
W
0.4...0.6
2
Nm
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
IF = 25 A;
IF = 25 A;
IF = 50 A;
V/ms
1
10
TVJ = 125°C
TVJ = 25°C
TVJ = 125 °C
RthJC
RthCH
0.5
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
mA
mA
0.59
0.69
0.73
V
V
V
1.1
K/W
K/W
IXYS reserves the right to change limits, Conditions and dimensions.
© 2002 IXYS All rights reserved
232
Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSS 25-0045A
100
10000
100
mA
A
pF
TVJ=175°C
IR
IF
10
CT
150°C
1 125°C
10
1000
100°C
0.1
TVJ =
175°C
150°C
125°C
25°C
75°C
50°C
0.01
25°C
1
0.0
TVJ= 25°C
100
0.001
0.2
0.4
0.6
0.8 V 1.0
0
10
20
30
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
40
A
35
30
IF(AV)
d=0.5 DC
25
10000
20
A
IFSM
P(AV)
d=
DC
0.5
0.33
0.25
0.17
0.08
20
10
10
10
20
30
VR
40 V
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
25
W
15
15
0
40 V 50
VR
VF
1000
5
5
0
0
0
40
80
120
TC
160°C
Fig. 4 Average forward current IF(AV)
versus case temperature TC
1
K/W
ZthJC
0
5
10 15 20 25 30 35 A
IF(AV)
100
10
100
1000 µs 10000
tP
Fig. 5 Forward power loss
characteristics
D=0.5
0.33
0.25
0.17
0.1
0.08
Single Pulse
(Thermal Resistance)
0.01
0.0001
DSS 25-0045A
0.001
0.01
0.1
s
1
10
t
Note: All curves are per diode
232
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2002 IXYS All rights reserved
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