Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE(sat) tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXBF 9N140 IXBF 9N160 VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C V V ± 20 V 7 4 A A 12 0.8VCES A 70 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGE(th) IC = 0.5 mA; VGE = VCE ICES VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 1400 1600 4.9 5.6 4 7 8 V 0.1 mA mA 500 nA 0.1 VCE = 0 V; VGE = ± 20 V V V td(on) tr td(off) tf Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 15/0 V; RG = 100 W 200 60 180 40 ns ns ns ns C ies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 7 A 550 44 pF nC VF (reverse conduction); IF = 5 A 3.6 V RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 1.75 K/W 031 Symbol 1-4 IXBF 9N140 IXBF 9N160 Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL £ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA C pin - E pin pin - backside metal RthCH with heatsink compound Weight © 2000 IXYS All rights reserved -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7 5.5 mm mm 0.15 K/W 9 g 2-4 IXBF 9N140 IXBF 9N160 30 30 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 15V 25 15V 25 13V IC - Amperes IC - Amperes 13V 20 15 10 20 15 10 5 5 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 30 30 VCE = 20V 25 25 TJ = 25°C TJ = 125°C IF - Amperes IC - Amperes TJ = 25°C 20 15 10 TJ = 125°C 20 15 10 5 5 0 0 4 6 8 10 12 0 14 2 4 6 8 10 VGE - Volts VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 16 15 VCE = 600V IC = 5A 14 ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES 5 IXBF 9N140 IXBF 9N160 4 2 0 0 10 20 30 40 50 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics © 2000 IXYS All rights reserved 0 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Biased Safe Operating Area RBSOA 3-4 IXBF 9N140 IXBF 9N160 70 250 VCE = 960V VGE = 15V td(off )- nanoseconds tfi - nanoseconds 60 RG = 100W TJ = 125°C 50 40 30 20 VCE = 960V VGE = 15V 200 IC = 5A TJ = 125°C 150 100 50 0 0 2 4 6 8 10 12 14 16 0 IC - Amperes 20 40 60 80 100 120 140 160 Rg - Ohms Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 10 ZthJC - K/W 1 0.1 Single Pulse 0.01 0.001 0.0001 IXBF09 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4-4