High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 VCES IC25 VCE(sat) tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings 15N140 15N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, 15 A IC90 TC = 90°C 9 A ICM TC = 25°C, 1 ms 18 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8•VCES Clamped inductive load, L = 100 mH ICM = 18 A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.15/10 Nm/lb.in. Weight Symbol 6 Conditions BVCES IC = 1 mA, VGE = 0 V VGE(th) IC = 1 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15N140 15N160 1400 1600 V V 4 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 5.8 7.7 • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Reverse conducting capability Applications • • • • Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density V 100 mA mA ± 500 nA 7.0 V V 0.1 Features 918 TJ = 125°C 8 C = Collector, TAB = Collector © 2000 IXYS All rights reserved 1-4 IXBH 15N140 IXBH 15N160 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(on) tri td(off) tfi IC = 9 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 47 W 1200 pF 80 pF 11 pF 45 nC 200 ns 60 ns 180 ns 40 ns 0.83 K/W RthJC RthCK 0.25 Reverse Conduction Symbol VF K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions IF = IC90, VGE = 0 V © 2000 IXYS All rights reserved min. typ. max. 3.8 5 V TO-247 AD Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 2-4 IXBH 15N140 IXBH 15N160 70 70 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 60 60 15V 13V 40 30 20 IC - Amperes IC - Amperes 15V 50 50 13V 40 30 20 10 10 0 0 0 2 4 6 8 0 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 22 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 30 60 VCE = 20V 25 IF - Amperes IC - Amperes 50 40 30 TJ = 125°C TJ = 25°C 20 20 15 10 10 5 0 0 TJ = 125°C 5 6 7 8 9 10 11 12 0 13 1 2 VGE - Volts 4 5 6 Fig. 4 Typ. Characteristics of Reverse Conduction 100 VCE = 600V IC = 9A 14 3 VF - Volts Fig. 3 Typ. Transfer Characteristics 16 TJ = 25°C ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES IXBH 15N140 IXBH 15N160 1 4 2 0 0 10 20 30 40 50 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics © 2000 IXYS All rights reserved 0.1 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Biased Safe Operating Area RBSOA 3-4 IXBH 15N140 IXBH 15N160 60 50 RG = 47W TJ = 125°C 40 td(off) - nanoseconds tfi - nanoseconds 400 VCE = 960V VGE = 15V 30 20 VCE = 960V VGE = 15V IC = 9A TJ = 125°C 300 200 100 10 0 0 0 5 10 15 20 0 IC - Amperes 10 20 30 40 50 60 70 80 90 100 RG - Ohms Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH15 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4-4