Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 42 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load 90 1350 A V TSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive 10 µs PC TC = 25°C ICM = VCES = 350 W TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved 350 °C 260 °C 1.13/10Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 750 µA, VCE = VGE 1700 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 4.5 5.0 = 1700 = 42 = 6.0 = 50 V A V ns TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector °C -55 ... +150 TJ VCES IC25 VCE(sat) tfi 5.5 V V 50 1.5 µA mA ±100 nA 6.0 V V Features z High Blocking Voltage z JEDEC TO-268 surface and JEDEC TO-247 AD z Fast switching z High current handling capability z MOS Gate turn-on - drive simplicity z Molding epoxies meet UL 94 V-0 flammability classification Applications z AC motor speed control z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z Substitutes for high voltage MOSFETs Advantages z Lower conduction losses than MOSFETs z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) 98939 (7/02) IXBH 42N170A IXBT 42N170A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 24 S 3700 pF 170 pF Cres 45 pF Qg 155 nC 30 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC 15 ∅P = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 55 nC td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Ω 35 ns 230 ns 50 ns 2.8 mJ 25 ns 38 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 5.0 mJ 300 ns 120 ns 6 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.35 K/W RthJC RthCK TO-247 AD Outline (TO-247) Reverse Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V 5.0 15 330 V A ns Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1