High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, 33 A IC90 TC = 90°C 20 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8•VCES Clamped inductive load, L = 100 mH ICM = 40 A PC TC = 25°C 350 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.15/10 Nm/lb.in. Weight 6 C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Intrinsic diode Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts g Advantages Conditions BVCES IC = 1 mA, VGE = 0 V VGE(th) IC = 2 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40N140 40N160 V V 4 8 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 6.2 TJ = 125°C IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1400 1600 • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density V 400 3 mA mA ± 500 nA 7.1 7.8 V V 031 Symbol 1-4 IXBH 40N140 IXBH 40N160 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(on) tri td(off) tfi IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 22 W 3300 pF 220 pF 30 pF 130 nC 200 ns 60 ns 270 ns 40 ns 0.35 K/W RthJC RthCK 0.25 Reverse Conduction Symbol VF K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved min. typ. max. 2.5 5 V TO-247 AD Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 2-4 IXBH 40N140 IXBH 40N160 70 70 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 60 60 15V 13V IC - Amperes IC - Amperes 15V 50 40 30 20 50 13V 40 30 20 10 10 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 70 70 VCE = 20V 60 60 50 50 IF - Amperes IC - Amperes 6 40 TJ = 25°C TJ = 125°C 30 40 30 TJ = 25°C 20 20 10 10 0 0.0 0 5 6 7 8 9 10 11 12 13 0.5 1.0 VGE - Volts 2.5 3.0 3.5 4.0 Fig. 4 Typ. Characteristics of Reverse Conduction 100 VCE = 600V IC = 20A 14 2.0 VF - Volts Fig. 3 Typ. Transfer Characteristics 16 1.5 TJ = 125°C ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES IXBH 40N140 IXBH 40N160 1 4 2 0 0 20 40 60 80 100 120 140 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics © 2000 IXYS All rights reserved 0.1 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Based Safe Operating Area RBSOA 3-4 IXBH 40N140 IXBH 40N160 400 VCE = 960V VGE = 15V IC = 20A TJ = 125°C VCE = 960V VGE = 15V 40 RG = 22W td(off) - nanoseconds tfi - nanoseconds 50 TJ = 125°C 30 20 10 300 200 100 0 0 0 10 20 30 40 0 10 20 30 40 RG - Ohms IC - Amperes Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4-4