IXYS IXDN414CI

IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
14 Ampere Low-Side Ultrafast MOSFET Drivers
Features
General Description
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
The IXDI414/IXDN414 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current while producing voltage rise and fall times of less
than 30ns to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further
enhanced by very low, matched rise and fall times.
Applications
The IXDN414 is configured as a non-inverting gate driver and
the IXDI414 is an inverting gate driver.
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Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
The IXDN414/IXDI414 family are available in standard 8 pin
P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM)
surface-mount packages.
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
Vcc
P
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
OUT
N
GND
* Patent Pending
Copyright © IXYS CORPORATION 2001
First Release
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram
Vcc
Vcc
P
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN
OUT
N
GND
GND
Pin Description And Configuration
SYMBOL
FUNCTION
VCC
Supply Voltage
IN
Input
OUT
Output
GND
Ground
2 IN
3 NC
4 GND
I
X
D
X
4
1
4
Vcc
OUT
GND
IN
NC
1
2
3
4
VCC 8
OUT 7
OUT 6
5
GND 5
IX D X 4 1 4 Y I
IX D X 4 1 4 C I
1 VCC
DESCRIPTION
Positive power-supply voltage input. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 25V.
Input signal-TTL or CMOS compatible.
Driver Output. For application purposes, this pin is connected via an
external resistor to a Gate of a MOSFET/IGBT.
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
TO220 (CI, CM)
TO263 (YI, YM)
8 PIN DIP (PI)
ORDERING INFORMATION
Part Number Package Type Temp. Range
Configuration
IXDN414PI
8-Pin PDIP
-40°C to +85°C
IXDN414CI
5-Pin TO-220
IXDN414CM 5-Pin TO-220
-55°C to +125°C Non Inverting
IXDN414YI
5-Pin TO-263
-40°C to +85°C
IXDN414YM
5-Pin TO-263
-55°C to +125°C
IXDI414PI
8-Pin PDIP
-40°C to +85°C
IXDI414CI
5-Pin TO-220
IXDI414CM
5-Pin TO-220
-55°C to +125°C Inverting
IXDI414YI
5-Pin TO-263
-40°C to +85°C
IXDI414YM
5-Pin TO-263
-55°C to +125°C
NOTE: Mounting or solder tabs on all packages are connected to ground
* Patent Pending
2
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage
Operating Ratings
Parameter
Maximum Junction Temperature
Value
25V
-0.3V to
V CC + 0.3V
All Other Pins
Operating Temperature Range
-40oC to 85oC
Thermal Impedance (Junction To Case)
TO220 (CI, CM),
0.55oC/W
TO263 (YI, YM) (θJC)
Power Dissipation
T CASE ≤85 o C: TO220 (CI), TO263 (YI)
T CASE ≤125 o C: TO220 (CM), TO263 (YM)
Value
150oC
16W
16W
Power Dissipation, T AMBIENT ≤25 o C
8 Pin PDIP (PI)
TO220 (CI, CM), TO263 (YI, YM)
975mW
2W
Derating Factors (to Ambient)
8 Pin PDIP (PI)
TO220 (CI, CM), TO263 (YI, YM)
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
7.6mW / o C
0.1W /o C
-65 o C to 150 o C
300 o C
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 25V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Symbol
Parameter
VIH
High input voltage
VIL
Low input voltage
VIN
Input voltage range
IIN
Input current
VOH
High output voltage
VOL
Low output voltage
ROH
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
IOUT = 10mA, VCC = 18V
Continuous output
current
(1)
Rise time
8 Pin Dip (PI) (Limited by pkg power dissipation)
TO220 (CI), TO263 (YI)
CL=15nF Vcc=18V
ROL
IPEAK
IDC
tR
(1)
Test Conditions
Min
Typ
Max
3.5
0V ≤ VIN ≤ VCC
Units
V
0.8
V
-5
VCC + 0.3
V
-10
10
µA
VCC - 0.025
V
0.025
V
600
1000
mΩ
IOUT = 10mA, VCC = 18V
600
1000
mΩ
VCC is 18V
14
A
22
3
4
27
A
A
ns
CL=15nF Vcc=18V
20
25
ns
tF
Fall time
tONDLY
CL=15nF Vcc=18V
30
33
ns
CL=15nF Vcc=18V
31
34
ns
VCC
On-time propagation
(1)
delay
Off-time propagation
(1)
delay
Power supply voltage
18
25
V
ICC
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µA
µA
tOFFDLY
(1)
4.5
See Figures 3a and 3b
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Specifications subject to change without notice
3
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Figure 3a - Characteristics Test Diagram
5.0V
Vcc
10uF
25V
0V
0V
IXDI414
Vcc
0V
IXDN414
15nF
Agilent 1147A
Current Probe
Figure 3b - Timing Diagrams
Non-Inverting (IXDN414) Timing Diagram
5V
90%
INPUT 2.5V
10%
0V
PW MIN
tONDLY
tOFFDLY
tR
tF
Vcc
90%
OUTPUT
10%
0V
Inverting (IXDI414) Timing Diagram
5V
90%
INPUT 2.5V
10%
0V
PWMIN
tONDLY
tF
VCC
90%
OUTPUT
10%
0V
4
tOFFDLY
tR
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Typical Performance Characteristics
Fig. 4
Rise Time vs. Supply Voltage
Fig. 5
40
40
30
30
Fall Time vs. Supply Voltage
Fall Time (ns)
Rise Time (ns)
CL=15,000 pF
CL=15,000 pF
20
20
7,500 pF
10
3,600 pF
10
7,500 pF
3,600 pF
0
0
8
10
12
14
16
8
18
10
12
Fig. 6
14
16
18
Supply Voltage (V)
Supply Voltage (V)
Rise And Fall Times vs. Case Temperature
CL = 15 nF, Vcc = 18V
Rise Time vs. Load Capacitance
Fig. 7
40
50
35
8V
40
30
12V
Rise Time (ns)
25
Time (ns)
10V
tR
tF
20
15
30
18V
14V 16V
20
10
10
5
0
-40
-20
0
20
40
60
80
100
0
0k
120
10k
15k
20k
Load Capacitance (pF)
Temperature (°C)
Fig. 8
5k
Fig. 9
Fall Time vs. Load Capacitance
Max / Min Input vs. Case Temperature
VCC=18V CL=15nF
3.2
40
3.0
Fall Time (ns)
Minimum Input High
2.8
10V
Max / Min Input (V)
14V 12V
30
8V
16V18V
20
2.6
2.4
2.2
Maximum Input Low
2.0
10
1.8
0
0k
1.6
-60
5k
10k
15k
20k
-40
-20
0
20
40
o
Temperature ( C)
Load Capacitance (pF)
5
60
80
100
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Fig. 11
Fig. 12
Supply Current vs. Load Capacitance
Vcc=18V
Supply Current vs. Frequency
Vcc=18V
1000
1000
100
100 2 MHz
Supply Current (mA)
Supply Current (mA)
CL= 30 nF
15 nF
1 MHz
500 kHz
10
100 kHz
5000 pF
10
2000 pF
1
50 kHz
1
1k
0.1
10k
10
100k
Fig. 13
100
1000
10000
Frequency (kHz)
Load Capacitance (pF)
Supply Current vs. Load Capacitance
Vcc=12V
Supply Current vs. Frequency
Vcc=12V
Fig. 14
1000
1000
CL = 30 nF
100
Supply Current (mA)
Supply Current (mA)
100
2 MHz
1 MHz
500 kHz
10
15 nF
5000 pF
10
2000 pF
1
100 kHz
50 kHz
1
1k
0.1
10k
10
100k
Fig. 15
Supply Current vs. Load Capacitance
Vcc=8V
1000
10000
Supply Current vs. Frequency
Vcc=8V
Fig. 16
1000
1000
CL= 30 nF
100
100
Supply Current (mA)
Supply Current (mA)
100
Frequency (kHz)
Load Capacitance (pF)
2 MHz
1 MHz
10 500 kHz
15 nF
10
5000 pF
2000 pF
1
100 kHz
1 50 kHz
1k
0.1
10k
10
100k
100
Frequency (kHz)
Load Capacitance (pF)
6
1000
10000
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Fig. 17
50
50
tOFFDLY
Propagation Delay vs. Input Voltage
CL=15nF VCC=15V
40
Propagation Delay (ns)
40
Propagation Delay (ns)
Fig. 18
Propagation Delay vs. Supply Voltage
CL=15nF [email protected]
tONDLY
30
20
tONDLY
30
tOFFDLY
20
10
10
0
0
8
10
12
14
16
2
18
4
Propagation Delay vs. Case Temperature
CL = 2500pF, VCC = 18V
Fig. 19
6
8
10
12
Input Voltage (V)
Supply Voltage (V)
Fig. 20 Quiescent Supply Current vs. Case Temperature
VCC=18V [email protected]
0.60
50
45
Quiescent Supply Current (mA)
35
Time (ns)
0.58
tONDLY
40
tOFFDLY
30
25
20
15
0.56
0.54
0.52
0.50
10
-40
-20
0
20
40
60
80
100
-40
120
-20
20
40
60
80
Temperature (oC)
Temperature (°C)
Fig. 21 P Channel Output Current vs. Case Temperature
VCC=18V CL=.1uF
Fig. 22 N Channel Output Current vs. Case Temperature
VCC=18V CL=.1uF
16
17
15
N Channel Output Current (A)
P Channel Output Current (A)
0
14
13
16
15
14
12
-40
-20
0
20
40
60
80
-40
100
-20
0
20
40
Temperature (oC)
o
Temperature ( C)
7
60
80
100
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Fig. 23
Fig. 24
Enable Threshold vs. Supply Voltage
14
High State Output Resistance (Ohm)
1.0
12
Enable Threshold (V)
High State Output Resistance
vs. Supply Voltage
10
8
6
4
2
0.8
0.6
0.4
0.2
0.0
0
8
10
12
14
16
18
20
22
24
10
8
26
Supply Voltage (V)
Low-State Output Resistance
vs. Supply Voltage
Fig. 25
15
20
25
Supply Voltage (V)
VCC vs. P Channel Output Current
CL=.1uF [email protected]
Fig. 26
1.0
0
-4
0.8
P Channel Output Current (A)
Low-State Output Resistance (Ohms)
-2
0.6
0.4
0.2
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
0.0
8
10
15
20
25
8
Supply Voltage (V)
Fig. 27
Vcc vs. N Channel Output Current
CL=.1uF [email protected]
22
N Channel Output Current (A)
20
18
16
14
12
10
8
6
4
2
0
10
15
15
20
Vcc
24
8
10
20
25
Vcc
8
25
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Supply Bypassing, Grounding Practices and Output Lead inductance
When designing a circuit to drive a high speed
MOSFET utilizing the IXDN414/IXDI414, it is very
important to observe certain design criteria in
order to optimize performance of the driver.
Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the
Output Lead Inductance.
GROUNDING
In order for the design to turn the load off properly,
the IXDN414 must be able to drain this 5A of
current into an adequate grounding system. There
are three paths for returning current that need to
be considered: Path #1 is between the IXDN414
and its load. Path #2 is between the IXDN414 and
its power supply. Path #3 is between the IXDN414
and whatever logic is driving it. All three of these
paths should be as low in resistance and
inductance as possible, and thus as short as
practical. In addition, every effort should be made
to keep these three ground paths distinctly
separate. Otherwise, the returning ground current
from the load may develop a voltage that would
have a detrimental effect on the logic line driving
the IXDN414.
Say, for example, we are using the IXDN414 to
charge a 5000pF capacitive load from 0 to 25
volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V
C=5000pF & ∆t=25ns we can determine that to
charge 5000pF to 25 volts in 25ns will take a
constant current of 5A. (In reality, the charging
current won’t be constant, and will peak
somewhere around 8A).
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and
Grounding are issues related to the Output Lead
Inductance. Every effort should be made to keep
the leads between the driver and it’s load as short
and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output
leads should be treated as transmission lines. In
this case, a twisted-pair should be considered,
and the return line of each twisted pair should be
placed as close as possible to the ground pin of
the driver, and connected directly to the ground
terminal of the load.
SUPPLY BYPASSING
In order for our design to turn the load on properly,
the IXDN414 must be able to draw this 5A of
current from the power supply in the 25ns. This
means that there must be very low impedance
between the driver and the power supply. The
most common method of achieving this low
impedance is to bypass the power supply at the
driver with a capacitance value that is a magnitude
larger than the load capacitance. Usually, this
would be achieved by placing two different types
of bypassing capacitors, with complementary
impedance curves, very close to the driver itself.
(These capacitors should be carefully selected,
low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at
high frequency due to inductance, so care should
be taken to keep the lengths of the leads between
these bypass capacitors and the IXDN414 to an
absolute minimum.
9
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: [email protected]
www.ixys.com
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: [email protected]
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: [email protected]
www.directedenergy.com
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Doc #9200-0244 R1