HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10 67 75 A A IDM TC = 25°C, pulse width limited by TJM 67N10 75N10 268 300 A A IAR TC = 25°C 67N10 75N10 67 75 A A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight RDS(on) 67 A 25 mW 75 A 20 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TJ ID25 TO-204 = 18 g, TO-247 = 6 g TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, G D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier ● ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays ● ● ● ● VDSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V V 4 V ±100 nA TJ = 25°C TJ = 125°C 250 1 mA mA 67N10 75N10 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.025 0.020 ● ● ● ● Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density ● RDS(on) VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved W W ● ● 91521F (10/95) 1-4 IXFH 67N10 IXFM 67N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = ID25, pulse test 25 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 S 4500 pF 1600 pF 800 pF IXFH 75N10 IXFM 75N10 TO-247 AD (IXFH) Outline 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 110 ns td(off) RG = 2 W, (External) 80 110 ns 60 90 ns 180 260 nC 36 70 nC 85 160 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.42 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 67N10 75N10 67 75 A A ISM Repetitive; pulse width limited by TJM 67N10 75N10 268 300 A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.75 V t rr IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C VR = 25 V TJ = 125°C 200 300 ns ns Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 2-4 IXFH 67N10 IXFM 67N10 Fig. 1 Output Characteristics 200 Fig. 2 Input Admittance 150 VGS = 10V TJ = 25°C IXFH 75N10 IXFM 75N10 125 9V 8V 100 7V 50 ID - Amperes ID - Amperes 150 100 75 50 25 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 125°C 0 1 2 3 VDS - Volts 6 7 8 9 10 2.50 TJ = 25°C 2.25 1.2 VGS = 10V 1.1 1.0 VGS = 15V RDS(on) - Normalized 1.3 RDS(on) - Normalized 5 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 0.9 2.00 1.75 1.50 ID = 37.5A 1.25 1.00 0.75 0.8 0 20 40 60 80 0.50 -50 100 120 140 160 -25 0 ID - Amperes Fig. 5 Drain Current vs. Case Temperature 1.2 75N10 BV/VG(th) - Normalized 67N10 60 25 50 75 100 125 150 TJ - Degrees C Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.1 ID - Amperes 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 80 TJ = 25°C 0 40 20 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 67N10 IXFM 67N10 Fig.7 Gate Charge Characteristic Curve IXFH 75N10 IXFM 75N10 Fig.8 Forward Bias Safe Operating Area 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 100µs 100 ID - Amperes 7 VGS - Volts 10µs Limited by RDS(on) 6 5 4 3 1ms 10ms 10 100ms 2 1 0 1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 6000 150 5000 125 Ciss IS - Amperes Capacitance - pF Fig.9 Capacitance Curves 4000 f = 1MHz VDS = 25V 3000 2000 100 Coss 1000 100 75 50 TJ = 125°C TJ = 25°C 0.50 1.00 25 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.75 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4