IXTK 21N100 IXTN 21N100 High Voltage MegaMOSTMFETs VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C 1000 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 1000 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C, Chip capability 21 21 A IDM TC = 25°C, pulse width limited by TJM 84 84 A PD TC = 25°C 500 520 W TJM 150 °C T stg -55 ... +150 °C 300 - °C t = 1 min t=1s - 2500 3000 V~ V~ Mounting torque Terminal connection torque 0.9/6 - TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Weight 10 D D (TAB) S miniBLOC, SOT-227 B E153432 S G D G °C -55 ... +150 TJ G 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g S S D S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features l l l l l l International standard packages JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification miniBLOC, (ISOTOP-compatible) with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 6 mA VGH(th) VDS = VGS, ID = 500 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 V l l l l DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls 4.5 V ±200 nA l TJ = 25°C TJ = 125°C 500 2 µA mA Advantages VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.55 Ω IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved l l l l Easy to mount Space savings High power density 92808I(5/97) 1-4 IXTK 21N100 IXTN 21N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), Q g(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Q gd R thJC TO-264 AA R thCK TO-264 AA R thJC miniBLOC, SOT-227 B R thCK miniBLOC, SOT-227 B Source-Drain Diode S 8400 pF 630 pF 110 pF 30 ns 50 ns 100 ns 40 ns 250 nC 60 nC 100 nC Dim. tf Q gs 24 0.25 0.15 K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IS VGS = 0 V 21 A ISM Repetitive; pulse width limited by TJM 84 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V IF = IS, -di/dt = 100 A/µs, VR = 100 V 1000 20 A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T K/W Symbol t rr IRM TO-264 AA Outline Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B ns A M4 screws (4x) supplied Dim. © 2000 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTK 21N100 IXTN 21N100 Fig. 1 Output Characteristics Fig. 2 Input Admittance 40 40 TJ = 25°C 35 6V 25 20 15 30 ID - Amperes 30 ID - Amperes 35 VGS = 10V 5V 10 25 20 TJ = 25°C 15 10 5 5 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 5 6 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.5 2.50 TJ = 25°C 2.25 RDS(on) - Normalized 1.4 1.3 1.2 VGS = 10V 1.1 VGS = 15V 1.0 2.00 1.75 1.50 ID = 12A 1.25 1.00 0.75 0.9 0 5 0.50 -50 10 15 20 25 30 35 40 45 50 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 25 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 20 ID - Amperes 7 VGS - Volts Fig. 3 RDS(on) vs. Drain Current RDS(on) - Normalized 4 15 10 5 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTK 21N100 IXTN 21N100 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 9000 10 VDS = 500V ID = 12A IG = 10mA 8 VGS - Volts 7 6 5 4 3 7000 6000 4000 3000 2000 1 1000 0 0 50 100 150 200 250 f = 1 MHz VDS = 25V 5000 2 0 Ciss 8000 Capacitance - pF 9 300 Coss Crss 0 Gate Charge - nCoulombs 5 10 15 20 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage 40 35 ID - Amperes 30 25 20 TJ = 125°C 15 TJ = 25°C 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.10 Transient Thermal Impedance R(th)JC - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4