HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 14N80 15N80 14 15 A A IDM TC = 25°C, pulse width limited by TJM 14N80 15N80 56 60 A A IAR TC = 25°C 14N80 15N80 14 15 A A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque RDS(on) 800 V 14 A 0.70 Ω 800 V 15 A 0.60 Ω trr ≤ 250 ns TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features TJ TJM Tstg TL ID25 1.13/10 Nm/lb.in. Weight 6 International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier • • • • g Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 3 mA VDSS temperature coefficient 800 V DS = VGS, ID = 4 mA VGS(th) temperature coefficient 2.5 VGS(th) IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 4.5 V %/K ±100 nA 25 1 µA mA 0.70 0.60 Ω Ω -0.214 TJ = 25°C TJ = 125°C 14N80 15N80 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2002 IXYS All rights reserved V %/K 0.096 • • • • • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density DS96523D(12/02) IXFH 14N80 IXFH 15N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 8 Ciss Coss 14 3965 VGS = 0 V, VDS = 25 V, f = 1 MHz Crss S 4870 pF 315 395 pF 73 120 pF 20 50 ns td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 Ω (External) 63 100 ns 32 50 ns 150 200 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 23 45 nC 64 68 nC 0.42 K/W RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 14N80 15N80 14 15 A A ISM Repetitive; 14N80 15N80 56 60 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 400 ns ns µC A t rr QRM IRM IF = IS -di/dt = 100 A/µs, VR = 100 V TJ = 25°C TJ = 125°C TO-247 AD Outline 1 8.5 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH 14N80 IXFH 15N80 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 20 20 O TJ = 25 C 5V 12 8 4 12 8 0 0 2 4 6 8 4V 10 0 4 8 2.6 20 2.6 2.2 2.4 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.4 RDS(ON) - Normalized 16 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 VGS = 10V 2.2 2.0 ID = 15A 1.8 1.6 ID = 7.5A 1.4 1.2 1.0 0 5 10 15 20 1.0 25 25 50 ID - Amperes 75 125 150 6 7 Figure 6. Admittance Curves 20 16 14 16 12 IXFH14N80 8 12 ID - Amperes IXFH15N80 10 8 TJ = 125oC 6 4 4 TJ = 25oC 2 0 -50 100 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature ID - Amperes 12 VDS - Volts VDS - Volts 0.8 5V 4 4V 0 VGS = 9V 8V 7V 6V 16 ID - Amperes 16 ID - Amperes TJ = 125OC VGS = 9V 8V 7V 6V -25 0 25 50 75 TC - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 2 3 4 5 VGS - Volts IXFH 14N80 IXFH 15N80 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 5000 Ciss VDS = 400V ID = 14A IG = 1mA 8 2500 Capacitance - pF VGS - Volts 10 6 4 2 0 f = 1MHz 1000 Coss 500 250 Crss 100 0 50 100 150 200 50 250 0 5 Gate Charge - nC 10 15 20 25 30 35 40 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 50 ID - Amperes 40 30 TJ = 125OC 20 TJ = 25OC 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 11. Transient Thermal Resistance 1 ZthJC - (K/W) D=0.5 0.1 0.01 0.001 0.00001 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.0001 D = Duty Cycle 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1