HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 120 480 120 A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 600 W TJ -55 ... +150 °C Features TJM Tstg 150 -55 ... +150 °C °C - °C 2500 3000 V~ V~ • Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 200 V VGS(th) VDS = VGS, ID = 8mA 2 4 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ±200 nA TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 100 mA 2 mA 17 mW • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 96538C (7/99) 1-2 IXFN 120N20 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 40 77 S 9100 pF 2200 pF 1000 pF 42 ns 55 ns M4 screws (4x) supplied 110 ns Dim. 40 ns A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 360 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 50 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 160 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 RthJC 0.22 0.05 RthCK Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM miniBLOC, SOT-227 B 1.1 mC 13 A Millimeter Min. Max. Inches Min. Max. Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2