IXYS IXFE73N30Q

IXFE 73N30Q
HiPerFETTM
Power MOSFETs
Q-Class
VDSS
ID25
RDS(on)
= 300 V
=
66 A
Ω
=
46 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
ISOPLUS 227TM (IXFE)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
300
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
300
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
66
A
IDM
TC = 25°C, Note1
292
A
IAR
TC = 25°C
73
A
EAR
TC = 25°C
60
mJ
2.5
J
5
V/ns
EAS
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
400
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
2500
3000
V~
V~
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
19
g
TJ
VISOL
50/60 Hz, RMS
IISOL≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque
Weight
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
300
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Note1
© 2002 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
4.0
V
±100
nA
100
2
µA
mA
46
mΩ
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Conforms to SOT-227B outline
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
98899 (1/02)
IXFE 73N30Q
Symbol
Test Conditions
gfs
VDS = 10 V; ID = IT, Note2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
30
47
S
6400
pF
1340
pF
Crss
340
pF
td(on)
37
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
36
ns
td(off)
RG = 1.0 Ω (External),
82
ns
12
ns
190
nC
51
nC
78
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.31
RthCK
0.07
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
ISOPLUS-227 B
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
73
A
292
A
1.5
V
250
ns
µC
A
0.8
7
Notes: 1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. IT Test current: IT = 36.5 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1