IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 66 A IDM TC = 25°C, Note1 292 A IAR TC = 25°C 73 A EAR TC = 25°C 60 mJ 2.5 J 5 V/ns EAS dv/dt PD IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 400 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 19 g TJ VISOL 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 300 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Note1 © 2002 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.0 V ±100 nA 100 2 µA mA 46 mΩ S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Low cost • Easy to mount • Space savings • High power density 98899 (1/02) IXFE 73N30Q Symbol Test Conditions gfs VDS = 10 V; ID = IT, Note2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 47 S 6400 pF 1340 pF Crss 340 pF td(on) 37 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 36 ns td(off) RG = 1.0 Ω (External), 82 ns 12 ns 190 nC 51 nC 78 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.31 RthCK 0.07 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM ISOPLUS-227 B IF = 25A, -di/dt = 100 A/µs, VR = 100 V 73 A 292 A 1.5 V 250 ns µC A 0.8 7 Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IT = 36.5 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1