IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IL(RMS) IDM IAR TC = 25°C Terminal (current limit) T C = 25°C; Note 1 TC = 25°C 176 100 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s Min. VDSS VGS= 0 V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2 IGSS VGS= ±20V, VGS = 0V IDSS VDS= VDSS VGS= 0 V RDS(on) VGS = 10V, ID = IT Note 2 © 2002 IXYS All rights reserved TJ = 25°C TJ = 125°C S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) 2500 3000 V~ V~ rated • Low package inductance 19 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S G 500 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. Weight ISOPLUS 227TM (IXFE) g Characteristic Values Typ. Max. V 4 V ±100 nA 100 2 µA mA 8 mΩ • Encapsulating epoxy meets UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting • Low voltage relays controls Advantages • Easy to mount • Space savings • High power density 98902 (2/02) IXFE 180N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10 V; ID = 60A, Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Characteristic Values Min. Typ. Max. 60 90 S 9100 pF 3200 pF 1600 pF 50 ns 90 ns 140 ns 65 ns 360 nC td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 65 nC 190 nC RthJC RthCK 0.25 Note: IT = 90 A Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions 0.07 K/W K/W Characteristic Values Min. Typ. Max. IS VGS = 0 180 A ISM Repetitive; Note1 720 A VSD IF = 100 A, VGS = 0 V, Note2 1.5 V 250 ns µC A t rr QRM IRM Notes: I F = 50 A, -di/dt = 100 A/µs, V R = 50 V ISOPLUS-227 B 1.1 13 Please see IXFN180N10 data sheet for characteristic curves. 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % 3. IT = 90A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1