HiPerFETTM Power MOSFETs VDSS RDS(on) 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ID25 TC = 25°C IDM ±30 V 33N50 35N50 33 35 A A TC = 25°C, pulse width limited by TJM 33N50 35N50 132 140 A A IAR TC = 25°C 33N50 35N50 30 35 A A EAS ID = 32 A 2.5 J EAR TC = 25°C 45 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD 5 TC = 25°C TJ TJM Tstg Nm/lb.in. Weight 10 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V %/K 0.102 4 V %/K ±200 nA TJ = 25°C TJ = 125°C 200 2 mA mA 33N50 35N50 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.16 0.15 W W VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 16.5A 2 -0.206 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved · International standard packages · Molding epoxies meet UL 94 V-0 · Fast intrinsic rectifier 0.9/6 IGSS Features · Low RDS (on) HDMOSTM process · Unclamped Inductive Switching (UIS) Mounting torque VDS = VGS, ID = 4 mA VGS(th) temperature coefficient D = Drain TAB = Drain °C °C °C Md VGS(th) G = Gate S = Source -55 ... +150 150 -55 ... +150 °C VGS = 0 V, ID = 1 mA VDSS temperature coefficient D (TAB) S W 300 VDSS D 416 1.6 mm (0.063 in) from case for 10 s Test Conditions G V/ns TL Symbol TO-264 AA flammability classification rated Applications · · · · DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls Advantages · Easy to mount · Space savings · High power density 97517D (07/00) 1-2 IXFK 33N50 IXFK 35N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss 28 VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 750 pF 240 310 pF 35 45 ns 42 50 ns 110 140 ns 23 35 ns Dim. 227 nC 29 nC 110 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.3 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD pF 640 RthJC t rr QRM IRM S 5200 5700 Crss Qgs 18 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 33 A Repetitive; pulse width limited by TJM 132 A IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A IF = IS, -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved TO-264 AA Outline 0.75 7 Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-2