HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS (Electrically Isolated Back Surface) IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 30 A IDM TC = 25°C, Pulse width limited by TJM 120 A IAR TC = 25°C 30 A EAS EAR TC = 25°C TC = 25°C 1.5 45 J mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD Maximum Ratings 30N50 32N50 30N50 32N50 30N50 32N50 TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 6 g Weight G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending 310 t = 1 minute leads-to-tab ISOPLUS 247TM E 153432 Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1, 2 4 V ±100 nA TJ = 25°C TJ = 125°C 100 1 mA mA 30N50 32N50 0.16 0.15 W W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98608B (7/00) 1-4 IXFR 30N50Q IXFR 32N50Q Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 18 28 S 3950 pF 640 pF 210 pF 35 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 42 ns td(off) RG = 1 W (External), 75 ns 20 ns 150 nC 26 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.40 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM Note: 2. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 32 A Repetitive; pulse width limited by TJM 128 A IF = IS, VGS = 0 V, Note 1 1.5 V 250 IF = Is, -di/dt = 100 A/ms, VR = 100 V IRM Note: 1. K/W ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 ns 0.75 mC 7.5 A IT test condition: IXFR30N50: IT = 15A IXFR32N50: IT = 16A Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFR 30N50Q IXFR 32N50Q Figure 1. Output Characteristics at 25OC 80 TJ = 125OC 6V 50 40 30 20 30 5V 20 4V 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 12 VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Tj=1250 C 2.0 1.6 Tj=250 C 1.2 0 10 20 30 40 50 2.4 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 60 50 Figure 5. Drain Current vs. Case Temperature 32 40 ID - Amperes 50 24 16 8 -50 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 125 150 30 20 100 125 150 0 TJ = 25oC TJ = 125oC 10 -25 100 Figure 6. Admittance Curves 40 0 75 TJ - Degrees C ID - Amperes ID - Amperes 6V 10 5V 10 0.8 VGS= 9V 8V 7V 40 ID - Amperes 60 ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC 70 Figure 2. Output Characteristics at 125OC 2 3 4 5 6 VGS - Volts 3-4 IXFR 30N50Q IXFR 32N50Q Figure 7. Gate Charge Figure 8. Capacitance Curves 14 10000 12 Vds=300V =30A ID=16A IG=10mA Capacitance - pF VGS - Volts 10 F = 1MHz Ciss 8 6 4 Coss 1000 Crss 2 0 0 50 100 150 200 100 250 0 Gate Charge - nC 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.60 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4