VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 800 V 14 A 800 V 15 A trr £ 250 ns IXFH14N80 IXFH15N80 RDS(on) 0.70 W 0.60 W Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 14N80 15N80 14 15 A A IDM TC = 25°C, pulse width limited by TJM 14N80 15N80 56 60 A A IAR TC = 25°C 14N80 15N80 14 15 A A EAR TC = 25°C 30 mJ 5 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C dv/dt Maximum Ratings IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier • • • • g Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 3 mA VDSS temperature coefficient 800 VDS = VGS, ID = 4 mA VGS(th) temperature coefficient 2.0 VGS(th) V %/K 0.096 4.5 V %/K ±100 nA TJ = 25°C TJ = 125°C 250 1 mA mA 14N80 15N80 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.70 0.60 W W IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 -0.214 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved • • • • • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 96523B (3/98) 1-4 IXFH 14N80 IXFH 15N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 8 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 14 TO-247 AD Outline S 3965 4870 pF 315 395 pF 73 120 pF 20 50 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 W (External) 63 100 ns 32 50 ns 128 155 nC 30 45 nC 55 80 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.42 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 14N80 15N80 14 15 A A ISM Repetitive; 14N80 15N80 56 60 A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 400 ns ns mC A t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved TJ = 25°C TJ = 125°C 1 8.5 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 14N80 IXFH 15N80 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 20 20 TJ = 25OC 5V 12 8 4 12 8 0 0 2 4 6 8 4V 10 0 4 8 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 20 2.6 2.2 2.4 TJ = 125OC RDS(ON) - Normalized VGS = 10V 2.4 RDS(ON) - Normalized 16 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.6 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 VGS = 10V 2.2 2.0 ID = 15A 1.8 1.6 ID = 7.5A 1.4 1.2 1.0 0 5 10 15 20 1.0 25 25 50 ID - Amperes 75 125 150 6 7 Figure 6. Admittance Curves 20 16 14 16 12 IXFH14N80 8 12 ID - Amperes IXFH15N80 10 8 TJ = 125oC 6 4 4 TJ = 25oC 2 0 -50 100 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature ID - Amperes 12 VDS - Volts VDS - Volts 0.8 5V 4 4V 0 VGS = 9V 8V 7V 6V 16 ID - Amperes 16 ID - Amperes TJ = 125OC VGS = 9V 8V 7V 6V -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 2 3 4 5 VGS - Volts 3-4 IXFH 14N80 IXFH 15N80 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 5000 2500 Capacitance - pF 10 VGS - Volts Ciss VDS = 400V ID = 15A IG = 1mA 8 6 4 2 0 f = 1MHz 1000 500 Coss 250 Crss 100 0 50 100 150 200 50 250 0 5 10 Gate Charge - nC 15 20 25 30 35 40 VDS - Volts Figure10. Forward Bias Safe Operating Area Figure 9. Source Current vs. Source to Drain Voltage 50 1 00 ID - Amperes ID - Amperes 40 30 TJ = 125OC 20 TJ = 25OC 0.1ms 10 1ms 10ms 100ms TC = 25OC 1 10 DC 0 0.2 0.4 0.6 0.8 1.0 1.2 0. 1 1.4 10 1 00 VDS - Volts VSD - Volts 1 000 Figure 11. Transient Thermal Resistance 1 R(th)JC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D = Duty Cycle D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4