IXYS IXFR24N100_08

IXFR24N100
HiPerFETTM Power
MOSFET
ISOPLUS247TM
VDSS
ID25
RDS(on)
trr
(Electrically Isolated Back Surface)
=
=
≤
≤
1000V
22A
Ω
390mΩ
250ns
N-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
22
A
IDM
TC = 25°C, pulse width limited by TJM
96
A
IA
TC = 25°C
24
A
EAS
TC = 25°C
3
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
5
V/ns
PD
TC = 25°C
416
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
20..120 / 4.5..27
N/lb.
5
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting force
t = 1min
t = 1s
Weight
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche rated
l
• Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 12A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
V
5.5
V
±200 nA
TJ = 125°C
100 μA
2 mA
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor drives
Advantages
• Easy assembly
• Space savings
• High power density
390 mΩ
DS98599C(10/08)
IXFR24N100
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
15
VDS = 10V, ID = 12A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
Qgd
27
S
8700
pF
785
pF
315
pF
35
ns
35
ns
75
ns
21
ns
267
nC
52
nC
142
nC
ISOPLUS247 (IXFR) Outline
0.30 °C/W
RthJC
RthCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
24
A
ISM
Repetitive, pulse width limited by TJM
96
A
VSD
IF = 24A, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
IF = 24A, -di/dt = 100A/μs
1.0
8.0
VR = 100V, VGS = 0V
250 ns
μC
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR24N100
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
24
55
VGS = 10V
7V
VGS = 10V
50
20
45
ID - Amperes
ID - Amperes
40
16
6V
12
8
7V
35
30
25
20
6V
15
10
4
5V
5
0
5V
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
24
2.8
VGS = 10V
2.6
20
VGS = 10V
2.4
RDS(on) - Normalized
6V
ID - Amperes
12
VDS - Volts
VDS - Volts
16
12
8
2.2
2.0
I D = 24A
1.8
I D = 12A
1.6
1.4
1.2
1.0
5V
4
0.8
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
24
22
VGS = 10V
2.4
TJ = 125ºC
20
2.2
18
2.0
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
1.4
16
14
12
10
8
6
1.2
4
TJ = 25ºC
1.0
2
0.8
0
0
5
10
15
20
25
30
35
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
40
45
50
55
-50
-25
0
25
50
75
TJ - Degrees Centigrade
100
125
150
IXFR24N100
Fig. 8. Transconductance
Fig. 7. Input Admittance
60
45
TJ = - 40ºC
40
50
TJ = 125ºC
25ºC
- 40ºC
30
25
g f s - Siemens
ID - Amperes
35
20
25ºC
40
125ºC
30
20
15
10
10
5
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
5
10
15
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
25
30
35
40
45
50
210
240
270
Fig. 10. Gate Charge
10
70
9
VDS = 500V
8
I G = 10mA
60
I D = 12A
50
7
VGS - Volts
IS - Amperes
20
ID - Amperes
40
TJ = 125ºC
30
TJ = 25ºC
20
6
5
4
3
2
10
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
30
60
VSD - Volts
90
120
150
180
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
Capacitance - PicoFarads
f = 1MHz
Ciss
Z(th)JC - ºC / W
10,000
Coss
1,000
0.100
Crss
100
0
5
10
15
20
25
30
35
40
VDS - Volts
0.010
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_24N100(9X)10-17-08-C