ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode Symbol Test Conditions IXGB 75N60BD1 VCES IC25 VCE(sat) tfi Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 120 A IC90 TC = 90°C 75 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 5 Ω ICM = 100 A (RBSOA) = = = = G C G = Gate E = Emitter 600 V 120 A 2.3 V 150 ns (TAB) E C = Collector Tab = Collector @ 0.8 VCES PC TC = 25°C 360 W Features • High current handling capability in -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 10 g 300 °C TJ Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s holeless TO-264 package • High frequency IGBT and antparallel FRED in one package • New generation HDMOSTM process • MOS Gate turn-on fordrive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 500 µA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Note1 © 2001 IXYS All rights reserved TJ = 125°C V 5.5 V 650 5 µA mA ±100 nA 2.3 V • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices on one package • Easy spring or clip mounting 98850 (8/01) IXGB 75N60BD1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. IC = 60A; VCE = 10 V, Note1 45 Cies Coes Cres Qg Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions S 5300 pF 730 190 pF pF 248 40 nC nC 76 nC 62 ns 57 ns 220 400 ns 150 270 ns 3.3 6 mJ 63 70 5 330 270 ns ns mJ ns ns 6.0 mJ 0.19 0.35 K/W K/W Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. VF IF = 60A, V GE = 0 V, Note1 IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/us VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V t rr 60 PLUS 264 OUTLINE TJ = 150°C TJ = 25°C RthJC 2 35 1.6 2.5 V V 2.5 175 50 A ns ns 0.65 K/W Notes: 1. Pulse test, t < 300µs,duty cycle < 2% IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025