HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque with screw M3 Mounting torque with screw M3.5 VCES IC25 VCE(sat) tfi(typ) = 600 V = 24 A = 2.7 V = 55 ns TO-247 C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 Features • Very high frequency IGBT • New generation HDMOSTM process • International standard package JEDEC TO-247 • High peak current handling capability Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES V CE = 0.8 VCES V GE = 0 V IGES V CE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 V © 2002 IXYS All rights reserved V TJ = 25°C TJ = 125°C 2.1 5.0 V 200 1.5 µA mA ±100 nA 2.7 V • • • • • PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers Advantages • Fast switching speed • High power density 98503B (2/02) IXGH 12N60C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 11 S 860 pF 64 pF Cres 15 pF Qg 32 nC 10 nC 10 nC Cies Coes Qge 5 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 20 ns tri IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω 20 ns 60 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Dim. Millimeter Min. Max. ns A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 55 ns 0.09 mJ C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 20 ns 20 ns 0.15 mJ Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inches Min. Max. E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 85 180 ns 85 180 ns L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 0.27 0.60 mJ N 1.5 2.49 0.087 0.102 1.25 K/W RthJC RthCK TO-247 AD (IXGH) Outline 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1