IXYS IXGH12N60C

HiPerFASTTM IGBT
LightspeedTM Series
IXGH 12N60C
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
24
A
IC90
TC = 90°C
12
A
ICM
TC = 25°C, 1 ms
48
A
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 300 µH
ICM = 24
@ 0.8 VCES
A
PC
TC = 25°C
100
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 24 A
= 2.7 V
= 55 ns
TO-247
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
6
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
g
°C
300
Features
• Very high frequency IGBT
• New generation HDMOSTM process
• International standard package
JEDEC TO-247
• High peak current handling capability
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 250 µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VGE = VGE
2.5
ICES
V CE = 0.8 VCES
V GE = 0 V
IGES
V CE = 0 V, VGE = ±20 V
VCE(sat)
IC
= ICE90, VGE = 15 V
© 2002 IXYS All rights reserved
V
TJ = 25°C
TJ = 125°C
2.1
5.0
V
200
1.5
µA
mA
±100
nA
2.7
V
•
•
•
•
•
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
• Fast switching speed
• High power density
98503B (2/02)
IXGH 12N60C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
11
S
860
pF
64
pF
Cres
15
pF
Qg
32
nC
10
nC
10
nC
Cies
Coes
Qge
5
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
20
ns
tri
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
20
ns
60
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Dim.
Millimeter
Min. Max.
ns
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
55
ns
0.09
mJ
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
20
ns
20
ns
0.15
mJ
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inches
Min. Max.
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
85
180
ns
85
180
ns
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
0.27
0.60
mJ
N
1.5
2.49
0.087
0.102
1.25 K/W
RthJC
RthCK
TO-247 AD (IXGH) Outline
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1