Ultra-Low VCE(sat) IGBT with Diode IXGH 31N60U1 VCES IC25 VCE(sat) = 600 V = 40 A = 1.8 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90 TC = 90°C 31 A I CM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH ICM = 62 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) TO-247 AD G Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l l l 1.13/10 Nm/lb.in. Weight C l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 750 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved TJ = 25°C TJ = 125°C l l l V 5.5 V 500 8 µA mA ±100 nA 1.8 V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l l l l Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density 92798D (3/96) IXGH 31N60U1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 9 Cies Coes 14 S 1500 pF 170 pF 40 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, T J = 25°°C tri IC = IC90 , VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω td(off) Eoff td(on) Inductive load, TJ = 125°°C nC 30 40 nC ns 160 ns 700 1100 ns 800 1100 ns 12 ns IC = IC90 , VGE = 15 V, L = 100 µH ns VCE = 0.8 VCES, RG = Roff = 10 Ω 2 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 850 ns 1700 ns 19 mJ RthJC 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ 50 Eon Eoff nC 30 160 tri tfi 100 15 50 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi 80 TO-247 AD Outline 0.83 K/W 0.25 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 10 120 35 1.6 V 15 A ns ns 50 1 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025