HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) = 15 V, TVJ = 125°C, RG = 33 Ω ICM = 24 V GE Clamped inductive load, L = 300 µH @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 = 600 V = 24 A = 2.7 V = 55 ns TO-263 (IXGA) G E C (TAB) TO-220 AB (IXGP) G C E G = Gate E = Emitter C = Collector TAB = Collector Features • Very high frequency IGBT • New generation HDMOSTM process • International standard package JEDEC TO-220AB and TO-263AA • High peak current handling capability Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES V CE = 0.8 VCES V GE = 0 V IGES V CE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 V © 2002 IXYS All rights reserved V TJ = 25°C TJ = 125°C 2.1 5.0 V 200 1.5 µA mA ±100 nA 2.7 V • • • • • PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers Advantages • Fast switching speed • High power density 98513C (2/02) IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 5 11 S 860 pF 100 pF Cres 15 pF Qg 32 nC 10 nC 10 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 20 ns tri IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Ω 20 ns 60 ns td(off) tfi Eoff td(on) tri Eon td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 20 ns 0.5 IGBT mJ 85 180 ns 85 180 ns 0.27 0.60 mJ 0.25 Reverse Diode (FRED) Test Conditions Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA (IXGA) Outline 1.25 K/W RthCK K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. I F = 15A; T VJ = 150°C 1.7 T VJ = 25°C IRM V R = 100 V; I F =25A; -di F /dt = 100 A/µs L < 0.05 µH; T VJ = 100°C t rr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C RthJC ns VCE = 0.8 VCES, RG = Roff = 18 Ω RthJC VF 20 IC = IC90, VGE = 15 V, L = 300 µH Eoff Symbol ns mJ Inductive load, TJ = 125°°C Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG tfi 55 0.09 TO-220 AB (IXGP) Outline 2 2.5 V V 2.5 A 35 Diode ns 1.6 K/W Min. Recommended Footprint Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1