Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IC90 TC = 90°C 120 A ICM TC = 25°C, 1 ms 400 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 2.4 W Clamped inductive load, L = 30 mH ICM = 200 @ 0.8 VCES A PC TC = 25°C 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions IC = 1 mA , VGE = 0 V 600 VGE(th) IC = 1 mA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES E V VGEM TJ SOT-227B, miniBLOC V 5.5 V 200 2 mA mA ±400 nA 2.1 V G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Low collector-to-case capacitance (< 50 pF) • Low package inductance (< 5 nH) - easy to drive and to protect Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 2 screws • Space savings • High power density 98606 (5/99) 1-2 IXGN 200N60B Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 60 A; VCE = 10 V, 50 75 S 11000 pF miniBLOC, SOT-227 B Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes 680 pF C res 190 pF Qg 350 nC 72 nC Qgc 131 nC td(on) 60 ns 45 ns 2.4 Qge t ri Eon td(off) t ri Eoff td(on) t ri Eon td(off) t ri Eoff VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG IC =100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG © 2000 IXYS All rights reserved Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 mJ E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 360 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 160 280 ns J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 5.5 9.6 mJ L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 ns P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 60 ns 4.8 mJ 290 ns 250 ns 8.7 mJ RthJC RthCK Millimeter Min. Max. 200 60 Inductive load, TJ = 125°C M4 screws (4x) supplied Dim. 0.21 K/W 0.05 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2