Advanced Technical Information ID25 VDSS RDSon trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C Symbol Conditions RDSon VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 3 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C Qg Qgs Qgd td(on) tr td(off) tf RthJC RthJH = 38 A = 600 V Ω = 60 mΩ = 70 ns Features MOSFET T IGSS IXKF 40N60SCD1 600 V ±20 V 38 25 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 60 3.5 70 mΩ 5.5 0.5 VGS = ±20 V; VDS = 0 V V 0.3 mA mA 100 nA VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 nC nC nC VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω 30 95 100 10 ns ns ns ns 0.9 0.45 K/W K/W with heat transfer paste • fast CoolMOS power MOSFET - 2nd generation - High blocking voltage - Low on resistance - Low thermal resistance due to reduced chip thickness • Series Schottky diode prevents current flow through MOSFET’s body diode - very low forward voltage - fast switching • Ultra fast HiPerFREDTM anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses • ISOPLUS i4-PACTM high voltage package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications Converters with • circuit operation leading to current flow through switches in reverse direction - e. g. - phaseleg with inductive load - resonant circuits • high switching frequency Examples • switched mode power supplies (SMPS) • uninterruptable power supplies (UPS) • DC-DC converters • welding converters • converters for inductive heating • drive converters IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Infineon Technologies AG. 212 CoolMOS is a trademark of 1-2 IXKF 40N60SCD1 Series Schottky Diode DS Dimensions in mm (1 mm = 0.0394") Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions VF IF = 20 A; TVJ = 25°C TVJ = 125°C 0.7 V V with heat transfer paste 2.9 2 K/W K/W RthJC RthJH Maximum Ratings 60 40 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.9 Anti Parallel Diode DF Symbol Conditions Maximum Ratings IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions VF IF = 20 A; TVJ = 25°C TVJ = 125°C 2.1 1.4 IRM trr IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 15 70 A ns RthJC RthJH with heat transfer paste 2.6 1.3 K/W K/W 32 16 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 V V Component Symbol Conditions VISOL IISOL ≤ 1 mA; 50/60 Hz Maximum Ratings TVJ Tstg FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case d S , dA d S , dA D pin - S pin pin - backside metal V~ -40...+150 -40...+125 °C °C 20 ... 120 N Characteristic Values min. typ. max. 40 7 5.5 pF mm mm 9 g 212 Weight 2500 © 2002 IXYS All rights reserved 2-2