FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS(on) max = 0.165 Ω CoolMOS™ 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge 3 3 ISOPLUS i4™ T 5 D 1 4 4 q D 1 T 2 FDM Features MOSFET T Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 7.9 A; TC = 25°C 600 V ± 20 V 15 11 A A 522 0.79 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 12 A VGS(th) VDS = VGS; ID = 0.79 mA IDSS VDS = 600 V; VGS = 0 V 2.5 TVJ = 25°C TVJ = 125°C typ. max. 150 165 3 3.5 V 1 µA µA 10 IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 40 9 13 VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω 12 5 50 5 tbd tbd tbd with heat transfer paste 0.35 RthJC RthCH 5 2 FMD td(on) tr td(off) tf Eon Eoff Erec off E72873 isolated back surface 100 2000 100 52 © 2009 IXYS All rights reserved Applications pF pF • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) nC nC nC Advantages nA ns ns ns ns mJ mJ mJ 1.1 IXYS reserves the right to change limits, test conditions and dimensions. mΩ • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density • HiPerDyn™ FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation K/W K/W • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20090209c 1-3 Advanced Technical Information MOSFET T Symbol FMD 15-06KC5 FDM 15-06KC5 Source-Drain Diode Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 12 A; VGS = 0 V 0.9 trr QRM IRM IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V 390 7.5 38 max. 12 A 1.2 V ns µC A Diode D (data for series connection) Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions Maximum Ratings V 15 8 A A Characteristic Values min. VF 600 typ. max. IF = 15 A IF = 30 A TVJ = 25°C 2.50 3.00 V V IF = 15 A IF = 30 A TVJ = 150°C 2.00 2.55 A A IR VR = VRRM TVJ = 25°C TVJ = 150°C 1 0.08 µA mA IFSM t = 10 ms (50 Hz), sine; TVJ = 45°C 150 A IRM trr IF = 20 A; VR = 100 V; -diF /dt = 200 A/µs TVJ = 25°C 3 35 A ns RthJC RthJH 2.4 with heat transfer paste K/W K/W 0.8 Component Symbol Conditions TVJ Tstg operating storage VISOL IISOL < 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Maximum Ratings coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal 2500 V~ 20...120 N typ. 40 1.7 5.5 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved °C °C Characteristic Values min. CP -55...+150 -55...+125 max. pF mm mm 9 g 20090209c 2-3 Advanced Technical Information FMD 15-06KC5 FDM 15-06KC5 ISOPLUS i4TM Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090209c 3-3