IGBT IXSH25N120A IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC90 ICM TC = 90°C TC = 25°C, 1 ms 25 80 A A ICM = 50 @ 0.8 VCES A 10 µs 200 W G SSOA VGE = 15 V, TJ = 125°C, RG = 33 W (RBSOA)Clamped inductive load, L = 100 µH tsc TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W PC TC = 25°C TJ -55 ... +150 °C 150 °C -55 ... +150 °C 1.15/10 Nm/lb-in. TJM TSTG Md TO-247AD Mounting torque Weight 6 Max. Lead Temperature for Soldering (1.6mm from case for 10s) g 300 °C C E Features • Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 2.5 mA, VCE = VGE ICES Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 V 8 V • • • • AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • DC choppers VCE = 0.8 VCES , VGE= 0 V TJ = 25°C 200 mA Note 2 TJ = 125°C 1 mA Advantages + 100 nA 4.0 V • Easy to mount (isolated mounting hole) • Reduces assembly time and cost IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 95593A (7/00) 1-2 IXSH 25N120A Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2 % IC(on) VGE = 15V, VCE = 10 V C ies VCE = 25 V, VGE = 0 V, f = 1 MHz Coes C res Qg Qge IC = Ic90, VGE = 15 V, VCE = 0.5 VCES Qgc 10 17 S 140 A 2850 pF 210 50 pF pF 120 30 nC nC 50 nC td(on) Inductive load, TJ = 25°C 100 ns t ri td(off) IC = IC90, VGE = 15 V, L = 100µH RG = 18 W, VCLAMP = 0.8 VCES 200 450 ns ns tfi Eoff Note 1 650 9.6 ns mJ td(on) t ri Inductive load, TJ = 125°C 100 200 ns ns 1.8 mJ E(on) IC= IC90, VGE = 15 V, L = 100µH RG = 18 W TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 ns J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) VCLAMP = 0.8 VCES 450 tfi Note 1 900 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 17 mJ N 1.5 2.49 0.087 0.102 0.25 0.63 K/W K/W Eoff RthJC RthCK Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values. 2) Device must be heatsunk for high temperature measurements to avoid thermal runaway. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2