IXYS IXGH6N170A

Advance Technical Data
IXGH 6N170A
IXGT 6N170A
High Voltage
IGBT
VCES
IC25
VCE(sat)
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
6
A
IC90
TC = 90°C
3
A
ICM
TC = 25°C, 1 ms
14
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 33Ω
ICM = 12
@ 0.8 VCES
TC = 25°C
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247
TO-268
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2003 IXYS All rights reserved
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
IGES
°C
300
Weight
1700
3.0
Note 1
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
5.5
6.5
E
C (TAB)
TO-247 AD (IXGH)
G
W
TJ
G
A
75
PC
TO-268 (IXGT)
µs
10
= 1700 V
=
6
A
= 7.0 V
=
32 ns
5.0
V
V
10
500
µA
µA
±100
nA
7.0
V
V
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98990A(01/03)
IXGH 6N170A
IXGT 6N170A
Symbol
Test Conditions
gfs
IC = IC25; VCE = 20 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies
Coes
2
3.5
S
330
pF
23
pF
6
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
QG
20
nC
3.6
nC
QGC
8
nC
td(on)
46
ns
QGE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°°C
tri
td(off)
IC = IC25, VGE = 15 V
tfi
RG = 33 Ω, VCE = 0.5 VCES
Eoff
40
450
ns
32
65
ns
0.19
0.40 mJ
48
ns
43
ns
0.7
230
mJ
ns
41
ns
0.26
mJ
0.25
1.65 K/W
K/W
td(on)
tri
Inductive load, TJ = 125°°C
Eon
td(off)
IC = IC25, VGE = 15 V
RG = 33 Ω, VCE = 0.5 VCES
tfi
Eoff
ns
220
TO-247 AD Outline
∅P
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
RthJC
RthCK
(TO-247)
Notes: 1.
2.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1