Advance Technical Data IXGH 6N170A IXGT 6N170A High Voltage IGBT VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 6 A IC90 TC = 90°C 3 A ICM TC = 25°C, 1 ms 14 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 33Ω ICM = 12 @ 0.8 VCES TC = 25°C -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2003 IXYS All rights reserved 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE IGES °C 300 Weight 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 5.5 6.5 E C (TAB) TO-247 AD (IXGH) G W TJ G A 75 PC TO-268 (IXGT) µs 10 = 1700 V = 6 A = 7.0 V = 32 ns 5.0 V V 10 500 µA µA ±100 nA 7.0 V V G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS98990A(01/03) IXGH 6N170A IXGT 6N170A Symbol Test Conditions gfs IC = IC25; VCE = 20 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes 2 3.5 S 330 pF 23 pF 6 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres QG 20 nC 3.6 nC QGC 8 nC td(on) 46 ns QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°°C tri td(off) IC = IC25, VGE = 15 V tfi RG = 33 Ω, VCE = 0.5 VCES Eoff 40 450 ns 32 65 ns 0.19 0.40 mJ 48 ns 43 ns 0.7 230 mJ ns 41 ns 0.26 mJ 0.25 1.65 K/W K/W td(on) tri Inductive load, TJ = 125°°C Eon td(off) IC = IC25, VGE = 15 V RG = 33 Ω, VCE = 0.5 VCES tfi Eoff ns 220 TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline RthJC RthCK (TO-247) Notes: 1. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1