IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 20 A ICM TC = 25°C, 1 ms 80 A ICM = 40 A SSOA VGE = 15 V, TVJ = 125°C, RG = 47 Ω (RBSOA) Clamped inductive load PC TC = 25°C W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Weight TO-247 TO-268 DS TO-268 (IXGT) G 150 TJM Mounting torque (TO-247) G @ 0.8 VCES TJ Md TO-247 (IXGH) °C 260 1.13/10 Nm/lb.in. E C (TAB) Features •International standard packages JEDEC TO-247 and TO-268 •High current handling capability •MOS Gate turn-on - drive simplicity 6 5 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. BVCES IC = 1 mA, VGE = 0 V 1200 VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES TJ = 25°C 250 µA VGE = 0 V TJ = 125°C 1 mA ±100 nA 2.5 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values Typ. Max. V 2.5 5.0 2.0 V Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies • Capacitor discharge Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density DS98966 (11/02) IXGH 20N120 IXGT 20N120 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, 12 16 TO-247 TO-247 Outline S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes 1750 pF 90 pF 31 pF 90 A 63 nC 13 nC 26 nC 28 ns VCE = 25 V, VGE = 0 V, f = 1 MHz Cres IC(ON) VGE = 10V, VCE = 10V Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff = IC90, VGE = 15 V 20 VCE = 800 V, RG = Roff = 47 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 800 ns 380 700 ns 6.5 10.5 mJ 30 ns 27 ns 0.90 mJ 700 ns 550 ns 9.5 mJ Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC RthCK ns 400 0.83 TO-247 0.25 Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 K/W Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1