IXYS IXSH35N140A

High Voltage,
High speed IGBT
IXSH 35N140A
VCES
IC25
VCE(sat)
1400 V
70 A
4V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1400
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1400
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
70
A
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load
tSC
(SCSOA)
VGE = 15 V, VCE = 840 V, TJ = 125°C
RG = 22 W, non repetitive
PC
TC = 25°C
35
A
140
A
ICM = 70
@ 960
A
V
10
µs
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
g
300
°C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
JEDEC TO-247
• High frequency IGBT with guaranteed
Short Circuit SOA capability
• Fast Fall Time for switching speeds
up to 20 kHz
• 2nd generation HDMOS
• Low V
TM
process
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
VGE(th)
IC
ICES
VCE = 1400 V
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 4 mA, VCE = VGE
= IC90, VGE = 15 V
© 2003 IXYS All rights reserved
4.5
TJ = 25°C
TJ = 125°C
3.4
6.5
V
50
2
µA
mA
±100
nA
4
V
•
•
•
•
AC motor speed control
•
Welding
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
•
Easy to mount with 1 screw
(isolated mounting screw hole)
•
High power density
DS92716I(06/03)
IXSH 35N140A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Cies
Coes
23
S
3000
pF
235
pF
Cres
60
pF
Qg
120
nC
32
nC
50
nC
40
ns
60
ns
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
16
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°C
td(off)
IC = IC90, VGE = 15 V
VCE = 960 V, RG = 3.0 Ω
tfi
150
300
ns
200
450
ns
Eoff
4.0
mJ
td(on)
40
ns
tri
65
ns
4
mJ
240
ns
400
ns
9.5
mJ
Eon
td(off)
tfi
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 960 V, RG = 3.0 Ω
Eoff
RthJC
RthCK
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
0.42 K/W
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXSH 35N140A
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
70
180
VGE = 17V
15V
13V
60
11V
15V
140
I C - Amperes
50
I C - Amperes
VGE = 17V
160
40
9V
30
20
13V
120
100
11V
80
60
9V
40
10
7V
20
0
7V
0
1
2
3
4
5
6
7
0
2
4
6
V CE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
10
12
14
16
18
20
Fig. 4. Tem perature Dependence of
V CE(sat)
70
1.5
VGE = 17V
15V
13V
50
40
9V
30
20
7V
10
VGE = 15V
1.4
11V
VC E (sat) - Normalized
60
I C - Amperes
8
V CE - Volts
I C = 70A
1.3
1.2
1.1
1
I C = 35A
0.9
0.8
I C = 17.5A
0.7
0.6
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter voltage
Fig. 6. Input Adm ittance
10
120
T J = 25ºC
9
100
I C - Amperes
VCE - Volts
8
7
6
I C = 70A
5
4
80
60
40
TJ = 125ºC
25ºC
-40ºC
35A
20
3
17.5A
2
0
8
9
10
11
12
13
V GE - Volts
© 2003 IXYS All rights reserved
14
15
16
17
5
6
7
8
9
V GE - Volts
10
11
12
IXSH 35N140A
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
35
18
30
E off - milliJoules
25
g fs - Siemens
16
TJ = -40ºC
25ºC
125ºC
20
15
10
5
I C = 70A
14
TJ = 125ºC
VGE = 15V
VCE = 960V
12
8
I C = 17.5A
6
0
4
0
20
40
60
80
100
120
0
5
10
I C - Amperes
16
RG = 3 Ω
R G = 30 Ω - - - - - -
14
VGE = 15V
VCE = 960V
30
RG = 3 Ω
R G = 30 Ω - - - - - -
18
16
10
T J = 125ºC
6
4
VGE = 15V
VCE = 960V
14
I C = 70A
12
10
8
I C = 35A
6
4
TJ = 25ºC
2
25
20
12
8
20
Fig. 10. Dependence of Eoff on
Tem perature
E off - milliJoules
E off - milliJoules
18
15
R G - Ohms
Fig. 9. Dependence of Eoff on Ic
I C = 17.5A
2
0
0
10
20
30
40
50
60
70
25
50
75
100
125
TJ - Degrees Centigrade
I C - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
10000
15
f = 1MHz
Capacitance - pF
VCE = 700V
I C = 35A
I G = 10mA
12
VGE - Volts
I C = 35A
10
9
6
C ies
1000
C oes
100
3
C res
0
10
0
20
40
60
80
100
120
Q G - nanoCoulombs
0
5
10
15
20
25
30
35
40
V CE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXSH 35N140A
Fig. 1 3 . M a x im um Tr a ns ie nt The rm a l Re s is ta nc e
R (th)JC - (ºC/W)
1
0.1
0.01
1
10
100
Puls e W idth - millis ec onds
© 2003 IXYS All rights reserved
1000