IXYS IXGK60N60C2D1

Advance Technical Data
HiPerFAST TM
IGBT with Diode
IXGK 60N60C2D1 VCES
IXGX 60N60C2D1 IC25
VCE(sat)
C2-Class High Speed IGBTs
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
60
A
ICM
TC = 25°C, 1 ms
300
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 100
A
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
480
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque, TO-264
Weight
TO-264
PLUS247
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1
© 2003 IXYS All rights reserved
g
g
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 250 µA, VCE = VGE
VGE(th)
10
6
3.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
2.1
1.8
5.0
V
650
5
µA
mA
±100
nA
2.5
V
V
= 600 V
= 75 A
= 2.5 V
= 35 ns
TO-264 AA
(IXGK)
G
(TAB)
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
DS99044A(09/03)
IXGK 60N60C2D1
IXGX 60N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
58
S
3900
280
pF
pF
Cres
97
pF
Qg
Qge
146
28
nC
nC
50
nC
gfs
Cies
Coes
IC = 50 A; VCE = 10 V,
Note 1
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Dim.
18
ns
Inductive load, TJ = 25°°C
25
ns
IC = 50 A, VGE = 15 V
95 150
ns
VCE = 400 V, RG = Roff = 2.0 Ω
35
ns
Eoff
0.48
0.8 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
18
25
0.9
130
80
1.2
ns
ns
mJ
ns
ns
mJ
0.15
0.26 K/W
K/W
tri
td(off)
tfi
Inductive load, TJ = 125°°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
RthJC
RthCK
Reverse Diode (FRED)
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247 Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 60 A, VGE = 0 V,
Note 1
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
t rr
TO-264 AA Outline
TJ = 150°C
RthJC
35
2.1
1.4
V
8.3
A
ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
100
200
VG E = 15V
13V
11V
90
175
70
7V
60
50
40
30
125
100
7V
75
50
20
5V
10
25
5V
0
0
0.5
1
1.5
2
2.5
3
1
3.5
1.5
2
2.5
3
4
4.5
V CE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of V CE(sat)
1.2
VGE = 15V
13V
11V
80
9V
1.1
70
VC E (sat) - Normalized
90
7V
60
50
40
30
5V
VG E = 15V
I C = 100A
1
0.9
I C = 50A
0.8
0.7
I C = 25A
20
0.6
10
0
0.5
0.5
1
1.5
2
2.5
3
3.5
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
5
200
T J = 25º C
4.5
175
150
I C - Amperes
4
VCE - Volts
3.5
V CE - Volts
100
I C - Amperes
9V
150
I C - Amperes
I C - Amperes
80
VG E = 15V
13V
11V
9V
3.5
3
2.5
I C = 100A
2
100
75
T J = 125º C
50
50A
1.5
125
25º C
-40º C
25
25A
1
0
5
6
7
8
9
10
11
V GE - Volts
© 2003 IXYS All rights reserved
12
13
14
15
3.5
4
4.5
5
5.5
6
6.5
V GE - Volts
7
7.5
8
8.5
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
100
6
TJ = 125º C
VGE = 15V
VCE = 400V
90
T J = -40º C
25º C
70
125º C
E off - milliJoules
g f s - Siemens
80
5
60
50
40
30
20
I C = 100A
4
I C = 75A
3
I C = 50A
2
I C = 25A
1
10
0
0
0
25
50
75
100
125
150
175
2
200
E off - milliJoules
E off - MilliJoules
14
R G = 2 Ohms
R G= 10 Ohms - - - - -
T J = 125 ºC
2
T J = 25 ºC
I C = 50A
0
0
60
70
80
90
I C = 75A
2
1
50
I C = 100A
3
1
40
16
VG E = 15V
VC E = 400V
I C = 25A
25
100
50
I C - Amperes
75
100
125
TJ - Degrees Centigrade
Fig. 11. Gate Charge
Fig. 12. Capacitance
15
10000
VC E = 300V
I C = 50A
I G = 10mA
Capacitance - pF
VG E - Volts
12
5
4
3
12
10
Fig. 10. Dependence of Eoff on Temperature
VG E = 15V
VC E = 400V
30
8
Fig. 9. Dependence of Eoff on IC
R G = 2 Ohms
R G = 10 Ohms - - - - -
20
6
R G - Ohms
5
4
4
I C - Amperes
9
6
f = 1M Hz
C ies
1000
C oes
100
C res
3
0
10
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
40
V CE - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGK 60N60C2D1
IXGX 60N60C2D1
4000
160
A
140
IF
nC
120
3000
TVJ= 25°C
100
Qr
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
TVJ=100°C
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
1000
40
20
20
0
0
1
2
0
100
V
A/µs 1000
-diF/dt
VF
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
2.0
140
TVJ= 100°C
VR = 300V
ns
130
trr
1.5
Kf
120
1.0
110
0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
20
1.6
V
VFR
15
µs
1.2
VFR
tfr
IF=120A
IF= 60A
IF= 30A
IRM
0
10
0.8
5
0.4
tfr
100
0.5
0.0
Qr
0
40
90
80
120 °C 160
80
0
200
TVJ
400
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 17 Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
0.001
0.0001
0.00001
0
TVJ= 100°C
IF = 60A
DSEP 2x61-06A
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
0.1
s
t
1
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399