Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 60 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 480 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1 © 2003 IXYS All rights reserved g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) 10 6 3.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 2.1 1.8 5.0 V 650 5 µA mA ±100 nA 2.5 V V = 600 V = 75 A = 2.5 V = 35 ns TO-264 AA (IXGK) G (TAB) C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw DS99044A(09/03) IXGK 60N60C2D1 IXGX 60N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 58 S 3900 280 pF pF Cres 97 pF Qg Qge 146 28 nC nC 50 nC gfs Cies Coes IC = 50 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Dim. 18 ns Inductive load, TJ = 25°°C 25 ns IC = 50 A, VGE = 15 V 95 150 ns VCE = 400 V, RG = Roff = 2.0 Ω 35 ns Eoff 0.48 0.8 mJ td(on) tri Eon td(off) tfi Eoff 18 25 0.9 130 80 1.2 ns ns mJ ns ns mJ 0.15 0.26 K/W K/W tri td(off) tfi Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω RthJC RthCK Reverse Diode (FRED) Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V t rr TO-264 AA Outline TJ = 150°C RthJC 35 2.1 1.4 V 8.3 A ns 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 100 200 VG E = 15V 13V 11V 90 175 70 7V 60 50 40 30 125 100 7V 75 50 20 5V 10 25 5V 0 0 0.5 1 1.5 2 2.5 3 1 3.5 1.5 2 2.5 3 4 4.5 V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. Temperature Dependence of V CE(sat) 1.2 VGE = 15V 13V 11V 80 9V 1.1 70 VC E (sat) - Normalized 90 7V 60 50 40 30 5V VG E = 15V I C = 100A 1 0.9 I C = 50A 0.8 0.7 I C = 25A 20 0.6 10 0 0.5 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage Fig. 6. Input Admittance 5 200 T J = 25º C 4.5 175 150 I C - Amperes 4 VCE - Volts 3.5 V CE - Volts 100 I C - Amperes 9V 150 I C - Amperes I C - Amperes 80 VG E = 15V 13V 11V 9V 3.5 3 2.5 I C = 100A 2 100 75 T J = 125º C 50 50A 1.5 125 25º C -40º C 25 25A 1 0 5 6 7 8 9 10 11 V GE - Volts © 2003 IXYS All rights reserved 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 V GE - Volts 7 7.5 8 8.5 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 100 6 TJ = 125º C VGE = 15V VCE = 400V 90 T J = -40º C 25º C 70 125º C E off - milliJoules g f s - Siemens 80 5 60 50 40 30 20 I C = 100A 4 I C = 75A 3 I C = 50A 2 I C = 25A 1 10 0 0 0 25 50 75 100 125 150 175 2 200 E off - milliJoules E off - MilliJoules 14 R G = 2 Ohms R G= 10 Ohms - - - - - T J = 125 ºC 2 T J = 25 ºC I C = 50A 0 0 60 70 80 90 I C = 75A 2 1 50 I C = 100A 3 1 40 16 VG E = 15V VC E = 400V I C = 25A 25 100 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 15 10000 VC E = 300V I C = 50A I G = 10mA Capacitance - pF VG E - Volts 12 5 4 3 12 10 Fig. 10. Dependence of Eoff on Temperature VG E = 15V VC E = 400V 30 8 Fig. 9. Dependence of Eoff on IC R G = 2 Ohms R G = 10 Ohms - - - - - 20 6 R G - Ohms 5 4 4 I C - Amperes 9 6 f = 1M Hz C ies 1000 C oes 100 C res 3 0 10 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 V CE - Volts Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGK 60N60C2D1 IXGX 60N60C2D1 4000 160 A 140 IF nC 120 3000 TVJ= 25°C 100 Qr 2000 TVJ= 100°C VR = 300V A 60 IF=120A IF= 60A IF= 30A TVJ=100°C 80 80 TVJ= 100°C VR = 300V IRM IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 1000 40 20 20 0 0 1 2 0 100 V A/µs 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 140 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 120 1.0 110 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs 1.2 VFR tfr IF=120A IF= 60A IF= 30A IRM 0 10 0.8 5 0.4 tfr 100 0.5 0.0 Qr 0 40 90 80 120 °C 160 80 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 0 TVJ= 100°C IF = 60A DSEP 2x61-06A 0.0001 0.001 0.01 Fig. 18 Transient thermal resistance junction to case © 2003 IXYS All rights reserved 0.1 s t 1 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399