HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90 TC = 90°C 50 A I CM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH ICM = 100 @ 0.8 VCES A PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md VCES IC25 VCE(sat) tfi G Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l l 0.9/6 Nm/lb.in. Weight 600 V 75 A 2.7 V 275 ns TO-264 AA l Mounting torque (M4) = = = = 10 g 300 °C l l International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 500 µA, VGE = 0 V 600 VGE(th) IC = 500 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C l l l l V 5.5 V 250 15 µA mA ±100 nA 2.7 V Advantages l l l l © 1997 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density 92821G (3/97) IXGK 50N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, T J = 25°°C IC = IC90 , VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 35 S 200 nC 50 nC 80 nC 50 ns 210 ns 200 ns 275 Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 V CES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 400 ns 4.8 mJ 50 ns 240 ns 3 mJ 280 ns 600 ns 9.6 mJ RthJC TO-264 AA Outline 0.42 K/W 0.15 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C 19 175 35 RthJC 1.7 V 33 A ns ns 50 0.75 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGK 50N60AU1 Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics 350 80 VGE = 15V T J = 25°C 70 300 IC - Amperes IC - Amperes 60 VGE = 15V 50 13V 11V 9V 7V 5V 40 30 20 150 0 3 7V 100 0 2 9V 200 50 1 4 5 5V 0 2 4 6 VCE - Volts 10 12 14 16 18 20 Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 10 T J = 25°C 9 1.4 VCE(sat) - Normalized 8 7 VCE - Volts 8 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 6 5 4 3 IC = 40A 2 1 4 5 6 7 8 IC = 80A 1.3 1.2 1.1 IC = 40A 1.0 0.9 IC = 20A 0.8 IC = 20A 0 0.7 -50 9 10 11 12 13 14 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 80 VCE = 100V VGE(th) @ 250µA BV / VCE(sat) - Normalized 70 60 IC - Amperes T J = 25°C 250 10 0 13V 11V 50 40 30 20 TJ = 25°C 10 1.1 1.0 0.9 BVCES @ 3mA 0.8 0.7 0.6 T J = 125°C 0 0 1 2 3 4 5 6 VGE - Volts © 1997 IXYS All rights reserved 7 8 9 10 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXGK 50N60AU1 Fig.7 Gate Charge 15 Fig.8 Turn-Off Safe Operating Area 100 IC = 40A VCE = 500V 10 IC - Amperes VGE - Volts 12 9 6 TJ = 125°C dV/dt < 3V/ns 1 0.1 3 0.01 0 0 50 100 150 200 250 0 100 200 Total Gate Charge - (nC) Fig.9 300 400 500 600 700 VCE - Volts Capacitance Curves 4500 Capacitance - pF 4000 Cies 3500 3000 2500 2000 = IXGK 50N60AU1 1500 Coes 1000 Cres 500 0 0 5 10 15 20 25 VCE - Volts Fig.10 Transient Thermal Impedance 1 ZthJC (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGK 50N60AU1 © 1997 IXYS All rights reserved IXGK 50N60AU1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025