Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE(sat) tfi typ IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A ICM TC = 25°C, 1 ms 300 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V PC TC = 25°C ICM = 80 A 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXGH) C (TAB) G Mounting torque (TO-247) 1.13/10Nm/lb.in. Weight TO-247 AD TO-268 6 4 g g C E TO-268 (IXGT) G C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features z z Md = 600 V = 75 A = 2.7 V = 48 ns z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V © 2004 IXYS All rights reserved 3.0 TJ = 25°C TJ = 150°C TJ = 125°C 2.1 1.8 5.0 V 50 1 µA mA ±100 nA 2.7 V V z z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS99147(01/04) IXGH 50N60C2 IXGT 50N60C2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 40 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 40 S 3700 pF 230 pF 50 pF 138 nC 25 nC 40 nC ∅P Cies Coes 51 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi 18 ns Inductive load, TJ = 25°°C 25 ns IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2 Ω 115 Eoff Eon td(off) tfi Inductive load, TJ = 125°°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2 Ω Eoff ns ns 0.38 0.7 mJ 18 ns 25 ns 0.45 mJ 170 ns 60 ns 0.74 mJ RthJC RthCK 150 48 td(on) tri TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.31 K/W (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 50N60C2 IXGT 50N60C2 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 80 320 VGE = 15V 13V 11V 70 9V 60 50 40 6V 30 20 200 9V 160 120 7V 80 10 40 5V 0 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 80 VGE = 15V 13V 11V 70 4 5 6 V C E - Volts 7 8 9 10 Fig. 4. De pende nce of V CE(sat) on Tem perature 1.2 9V VC E ( s a t )- Normalized 50 40 V GE = 15V 1.1 7V 60 I C - Amperes 11V 240 7V I C - Amperes I C - Amperes VGE = 15V 13V 280 6V 30 20 1.0 I C = 80A 0.9 I C = 40A 0.8 0.7 0.6 10 I C = 20A 5V 0 0.5 0.5 1 1.5 2 2.5 3 3.5 4 25 50 V CE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 4.8 TJ = 25ºC 4.5 180 160 I C = 80A 40A 20A 3.9 3.6 I C - Amperes VC E - Volts 4.2 3.3 140 120 100 80 60 3 TJ = 125ºC 25ºC 40 2.7 20 2.4 0 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 7 V G E - Volts 7.5 8 8.5 9 IXGH 50N60C2 IXGT 50N60C2 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 70 3 TJ = 125ºC VGE = 15V VCE = 480V 2.7 TJ = 25ºC 125ºC 2.4 50 E o f f - milliJoules g f s - Siemens 60 40 30 20 I C = 80A 2.1 1.8 1.5 1.2 I C = 40A 0.9 0.6 10 0.3 0 I C = 20A 0 0 20 40 60 80 100 120 140 160 180 200 2 4 6 8 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 12 14 16 18 Fig. 10. Dependence of Turn-Off Energy on Tem perature 2.2 2.4 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 1.8 1.6 1.8 1.4 1.2 TJ = 125ºC 1 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 2.1 E o f f - milliJoules 2 E o f f - MilliJoules 10 R G - Ohms 0.8 0.6 TJ = 25ºC I C = 80A 1.5 1.2 0.9 I C = 40A 0.6 0.4 0.3 0.2 I C = 20A 0 0 20 30 40 50 60 70 25 80 35 45 I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 65 75 85 95 105 115 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 200 450 td(off) tfi - - - - - - 400 Switching Time - nanoseconds Switching Time - nanoseconds 55 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 480V 350 300 250 200 I C = 20A I C = 40A I C = 80A 150 100 50 td(off) tfi - - - - - - 180 R G = 2Ω VGE = 15V VCE = 480V 160 140 TJ = 125ºC 120 100 TJ = 25ºC 80 60 40 2 4 6 8 10 12 14 16 18 20 30 R G - Ohms 40 50 60 70 80 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGH 50N60C2 IXGT 50N60C2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Reverse-Bias Safe Operating Area 100 td(off) tfi - - - - - - 180 90 I C = 20A R G = 2Ω VGE = 15V VCE = 480V 160 140 80 70 120 I C - Amperes Switching Time - nanoseconds 200 I C = 80A 100 80 I C = 40A 60 60 50 40 TJ = 125º C 30 R G = 10Ω dV/dT < 10V/ns 20 40 10 I C = 20A 20 0 25 35 45 55 65 75 85 95 105 115 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 16 10000 12 f = 1 MHz Capacitance - picoFarrads VCE = 300V I C = 40A I G = 10mA 14 VG E - Volts 400 CE 10 8 6 4 C ies 1000 C oes 100 2 C res 0 10 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig. 16. Maxim um Transient Therm al Resistance 0.35 R ( t h ) J C - ºC / W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000