IXYS L104

CS 8
Phase Control Thyristors
VRRM = 800-1200 V
IT(RMS) = 25 A
IT(AV)M = 16 A
VRSM
VDSM
VRRM
VDRM
TO-64
V
V
900
1300
800
1200
Type
1
2
2
3
3
CS 8-08io2
CS 8-12io2
1
M5
1 = Anode, 2 = Cathode, 3 = Gate
Symbol
Test Conditions
Maximum Ratings
IT(RMS)
IT(AV)M
TVJ = TVJM
Tcase = 85°C; 180° sine
ITSM
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
Features
Thyristor for line frequencies
International standard package
JEDEC TO-64
Planar glassivated chip
Long-term stability of blocking
currents and voltages
●
2
It
25
16
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
250
270
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
220
A
A
2
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
310
306
As
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
200
A2s
A2s
●
●
●
Applications
Motor control
Power converter
AC power controller
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
●
(di/dt)cr
TVJ = TVJM
repetitive, IT = 48 A
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.2 A
non repetitive, IT = IT(AV)M
diG/dt = 0.2 A/ms
(dv/dt)cr
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = IT(AV)M
tP = 30 ms
tP = 300 ms
150
A/ms
●
500
A/ms
1000
V/ms
Dimensions in mm (1 mm = 0.0394")
PG(AV)
10
5
0.5
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
Md
Mounting torque
Weight
●
2.5
22
6
Nm
lb.in.
g
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-3
CS 8
Symbol
Test Conditions
Characteristic Values
IR, ID
TVJ = TVJM; VR = VRRM; VD = VDRM
£
3
VT
IT
£
1.6
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
1.0
18
V
mW
VGT
VD = 6 V;
IGT
VD = 6 V;
VGD
IGD
TVJ = TVJM;
IL
= 33 A; TVJ = 25°C
mA
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
£
£
£
£
2.5
3.5
30
50
V
V
mA
mA
VD = 2/3 VDRM
£
£
0.2
1
V
mA
TVJ = 25°C; tP = 10 ms
IG = 0.09 A; diG/dt = 0.09 A/ms
£
100
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
80
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.09 A; diG/dt = 0.09 A/ms
£
2
ms
tq
TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
typ.
60
ms
RthJC
RthJH
DC current
DC current
1.5
2.5
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. acceleration, 50 Hz
1.55
1.55
50
mm
mm
m/s2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
4
102
50
V
ms
A
C
B
tgd
B
IGT: TVJ= 25°C
2
1
IT
101
30
IGT: TVJ= -40°C
B
lim.
40
3
IGT: TVJ= 0°C
VG
typ.
lim.
20
100
typ.
10
TVJ= 125°C
TVJ= 25°C
A
IGD: TVJ= 25°C
IGD: TVJ=125°C
0
0
25
50
IG
mA
75
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
© 2000 IXYS All rights reserved
10-1
10-2
10-1
A 101
100
t
Fig. 2 Gate controlled delay time tgd
0
0.0
0.5
1.0
1.5 V
VT
2.0
Fig. 3 On-state characteristics
2-3
CS 8
300
20
1000
VR = 0 V
2
800
A
s
A
250
600
50Hz, 80%VRRM
ITSM
200
A
15
IT(AV)M
I2t
TVJ = 45°C
TVJ = 125°C
400
150
10
TVJ = 45°C
100
200
5
TVJ = 125°C
50
0
10-3
0
100
10-2
10-1
100
s
101
1
2
t
3
4 5 6 7 ms
8 910
t
Fig. 5 I2t versus time (1-10 ms)
Fig. 4 Surge overload current
ITSM: crest value, t: duration
0
50
100
°C 150
Tcase
Fig. 6 Maximum forward current at
case temperature 180° sine
40
RthJA :
W
2.8 K/W
30
3.2 K/W
PT
3.6 K/W
3.6 K/W
20
5.2 K/W
DC
180° sin
120°
60°
30°
10
7 K/W
0
0
5
10
15
20
25 A
IT(AV)M
0
30
50
100
°C 150
Tamb
Fig. 7 Power dissipation versus on-state current and ambient temperature
RthJH for various conduction angles d:
3.5
K/W
d = 30°
d = 60°
d = 120°
3.0
d = 180°
2.5
ZthJH
d = DC
2.0
d
RthJH (K/W)
DC
180°
120°
60°
30°
2.5
2.79
2.95
3.17
3.32
Constants for ZthJH calculation:
1.5
i
1
2
3
4
5
6
1.0
0.5
0.0
10-3
10-2
10-1
100
101
102
t
s
Rthi (K/W)
ti (s)
0.252
0.333
0.5
0.833
0.416
0.166
0.005
0.0225
0.145
0.43
2.75
23
103
Fig. 8 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
3-3