IXYS CS23

CS 23
Phase Control Thyristors
VRSM
VDSM
VRRM
VDRM
V
V
900
1300
1700
800
1200
1600
VRRM = 800-1600 V
IT(RMS) = 50 A
IT(AV)M = 32 A
Type
2
1
TO-208AA
(TO-48)
2
3
3
CS 23-08io2
CS 23-12io2
CS 23-16io2
1
M6
1 = Anode, 2 = Cathode, 3 = Gate
Symbol
Test Conditions
Maximum Ratings
Features
Thyristor for line frequencies
International standard package
JEDEC TO-208AA
Planar glassivated chip
Long-term stability of blocking
currents and voltages
●
ITSM
I2t
(di/dt)cr
TVJ = TVJM
Tcase = 85°C; 180° sine
Tcase = 69°C; 180° sine
50
25
32
A
A
A
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
480
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
400
430
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1010
970
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
800
770
A2s
A2s
TVJ = TVJM
repetitive, IT = 75 A
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A
non repetitive, IT = IT(AV)M
diG/dt = 0.3 A/ms
150
A/ms
500
A/ms
1000
V/ms
(dv/dt)cr
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = IT(AV)M
tP = 30 ms
tP = 300 ms
PG(AV)
10
5
0.5
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
Md
Mounting torque
Weight
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
2.7-3.3
24-29
12
●
●
●
Applications
Motor control
Power converter
AC power controller
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
●
●
●
Dimensions in mm (1 mm = 0.0394")
Nm
lb.in.
g
740
IT(RMS)
IT(AV)M
1-3
CS 23
Symbol
Test Conditions
Characteristic Values
IR, ID
TVJ = TVJM; VR = VRRM; VD = VDRM
£
3
VT
IT
£
1.8
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
1.0
10
V
mW
VGT
VD = 6 V;
IGT
VD = 6 V;
VGD
IGD
TVJ = TVJM;
IL
= 80 A; TVJ = 25°C
mA
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
£
£
£
£
2.5
3.5
50
80
V
V
mA
mA
VD = 2/3 VDRM
£
£
0.2
1
V
mA
TVJ = 25°C; tP = 10 ms
IG = 0.15 A; diG/dt = 0.15 A/ms
£
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
100
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.15 A; diG/dt = 0.15 A/ms
£
2
ms
tq
TVJ = TVJM; IT = 25 A, tP = 300 ms; di/dt = -20 A/ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
typ.
60
ms
RthJC
RthJH
DC current
DC current
1.0 K/W
1.61 K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. acceleration, 50 Hz
1.5
1.5
50
mm
mm
m/s2
Accessories:
Nut M6 DIN 439/SW14
Lock washer A6 DIN 128
102
4
V
ms
C
tgd
IT
101
IGT: TVJ= -40°C
IGT: TVJ= 0°C
B
lim.
100
B
2
typ.
A
TVJ= 125°C
TVJ= 25°C
B
3
IGT: TVJ= 25°C
VG
120
80
60
lim.
100
40
1
typ.
20
A
IGD: TVJ= 25°C
IGD: TVJ=125°C
0
0
25
50
75 mA
100
IG
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
© 2000 IXYS All rights reserved
10-1
10-2
10-1
A 101
100
t
Fig. 2 Gate controlled delay time tgd
0
0.0
0.5
1.0
1.5
2.0 V 2.5
VT
Fig. 3 On-state characteristics
2-3
CS 23
1000
500
40
VR = 0 V
2
800
A
s
A
50Hz, 80%VRRM
400
ITSM
A
TVJ = 45°C
600
TVJ = 45°C
TVJ = 125°C
30
IT(AV)M
I2t
TVJ = 125°C
400
300
20
200
200
10
100
0
10-3
0
100
10-2
10-1
100
s
101
1
2
3
5 6 7 ms
8 910
t
4
t
Fig. 5 I2t versus time (1-10 ms)
Fig. 4 Surge overload current
ITSM: crest value, t: duration
0
50
100
°C 150
Tcase
Fig. 6 Maximum forward current at
case temperature 180° sine
80
W
RthJA :
1.9 K/W
60
PT
2.3 K/W
2.7 K/W
40
2.7 K/W
DC
180° sin
120°
60°
30°
20
4.3 K/W
6.1 K/W
0
0
10
20
30
40
50 A
IT(AV)M
0
60
50
100
°C 150
Tamb
Fig. 7 Power dissipation versus on-state current and ambient temperature
RthJH for various conduction angles d:
K/W
d
RthJH (K/W)
DC
180°
120°
60°
30°
1.61
1.85
2.03
2.35
2.60
d = 30°
d = 60°
d = 120°
2
ZthJH
d = 180°
d = DC
Constants for ZthJH calculation:
i
1
0
10-3
1
2
3
4
5
6
10-2
10-1
100
101
102
103 s
t
Rthi (K/W)
0.224
0.132
0.321
0.522
0.249
0.162
ti (s)
0.003
0.028
0.216
1.1
4.2
43.2
104
Fig. 8 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
3-3