Advanced Technical Information HiPerFREDTM Epitaxial Diode MEK 600-04 DA dual diode, common cathode VRSM VRRM V V 400 400 1 Type 2 VRRM = 400 V IFAVM = 880 A trr = 220 ns 3 2 3 1 MEK 600-04DA Symbol Conditions Maximum Ratings IFAVM IFAVM TC = 25°C; rectangular, d = 0.5 TC = 80°C; rectangular, d = 0.5 880 575 A A IFSM TVJ = 25°C; t = 10 ms (50 Hz), sine tbd A -40...+150 -40...+125 °C °C Features Ptot TC = 25°C 1100 W • HiPerFREDTM diode chips - fast reverse recovery - low operating forward voltage - low leakage current - avalanche capability • Industry Standard package - with isolated DCB ceramic base plate - UL registered E72873 VISOL 50/60 Hz, RMS; IISOL ≤ 1 mA 3600 V~ Applications Md Mounting torque with screw M5 Terminal connection torque a Allowable acceleration Symbol Conditions TVJ Tstg 2.25-2.75/20-25 4.5-5.5/40-48 Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM VF IF = 400 A; trr IRM VR = 100 V; -diF/dt = 900 A/µs IF = 400 A; TVJ = 125°C 6 6 TVJ = 125°C TVJ = 25°C 1.1 1.4 220 80 RthJS RthJC dS dA m/s2 50 min. IR Nm/lb.in. Nm/lb.in. Weight 12.7 9.6 V V Dimensions in mm (1 mm = 0.0394") ns A 0.11 0.22 Creeping distance on surface Strike distance through air mA mA • Topologies - dual diode with common cathode - high current single diode with pins 1 and 3 paralleled • Circuits - free wheeling diode of choppers, H-bridges, phaselegs etc. - secondary rectifier for switched mode power supplies, welders etc. K/W K/W mm mm 150 g 010 Data according to IEC 60747 © 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. 1-1 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670