IXYS VWI15-12P1

Advanced Technical Information
VWI 15-12P1 IC25
IGBT Module
VCES
VCE(sat) typ.
Sixpack in ECO-PAC 2
= 18 A
= 1200 V
= 2.3 V
S9
L9
N5
N9
R5
X 18
W 14
A5
D5
H5
A1
F3
C1
K 10
G1
Features
IGBTs
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
1200
V
± 20
V
IC25
IC80
TC = 25°C
TC = 80°C
18
14
A
A
ICM
VCEK
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
20
A
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
µs
Ptot
TC = 25°C
90
W
Symbol
Conditions
VCE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 0.4 mA; VGE = VCE
ICES
VCE = VCES;
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
VCES
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.7
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
2.7
V
V
6.5
V
0.5
mA
mA
200
nA
0.8
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
50
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 10 A
600
45
pF
nC
RthJC
RthJH
(per IGBT)
(per IGBT) with heatsink compound
2.7
1.4 K/W
K/W
• AC drives
• power supplies with power factor
correction
210
Symbol
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
www.ixys.net
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
VWI 15-12P1
Dimensions in mm (1 mm = 0.0394")
Diodes
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
15
10
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 10 A; TVJ = 25°C
TVJ = 125°C
IRM
t rr
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
RthJC
RthJH
(per diode)
(per diode) with heatsink compound
2.6
1.9
A
A
3.0
V
V
13
110
A
ns
5.0
3.5 K/W
K/W
Component
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
3600
V~
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
VISOL
IISOL ≤ 1 mA; 50/60 Hz; t = 1 s
Md
mounting torque (M4)
a
Max. allowable acceleration
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
Weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
mm
mm
24
g
210
Symbol
2-2