MEK 350-02 DA Fast Recovery Epitaxial Diode (FRED) Module 1 VRSM VRRM V V 200 200 2 VRRM = 200 V IFAVM = 356 A trr = 150 ns 3 2 Type 3 1 MEK 350-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM Maximum Ratings 503 356 1800 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2400 2640 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2160 2380 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28800 29300 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 23300 23800 A2s A2s -40...+150 -40...+125 110 °C °C °C 875 W 3000 3600 V~ V~ Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 ● ● ● ● ● ● TVJ = 45°C; TVJ Tstg TSmax Ptot TC = 25°C VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Md Mounting torque (M6) Terminal connection torque (M6) dS dA a 2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. Creeping distance on surface Strike distance through air Maximum allowable acceleration Weight Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM VF IF = 150 A; TVJ TVJ TVJ TVJ IF = 260 A; mm mm m/s2 150 g Characteristic Values (per diode) typ. max. 3 2 80 = 125°C = 25°C = 125°C = 25°C VT0 rT For power-loss calculations only RthJH RthJC DC current DC current trr IRM 12.7 9.6 50 IF = 300 A VR= 100 V -di/dt = 200 A/ms TVJ = 100°C TVJ = 25°C TVJ = 100°C 150 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses ● ● ● ● Dimensions in mm (1 mm = 0.0394") mA mA mA 0.80 0.98 0.92 1.07 V V V V 0.53 1.29 V mW 0.228 0.143 K/W K/W 200 9 15 ● ns A A 911 I2t 1-2 MEK 350-02 DA 400 A 350 IF 3.0 60 TVJ= 100°C A VR = 100V 50 TVJ= 100°C µC V = 100V R 2.5 IRM Qr 300 2.0 250 TVJ=125°C TVJ=25°C 200 IF= 700A IF= 350A IF= 175A 1.5 150 IF= 700A IF= 350A IF= 175A 40 30 1.0 20 0.5 10 100 50 0 0.0 0.4 0.0 10 1.2 V 0.8 100 VF Fig. 1 Forward current IF versus voltage drop VF per leg Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 280 Kf 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt TVJ= 125°C IF = 350A tfr 80 tfr 3.0 VFR 60 1.0 4.5 µs 4.0 3.5 VFR 70 IF= 700A IF= 350A IF= 175A 200 IRM 0 V 90 240 trr Qr 0 100 TVJ= 100°C VR = 100V ns 1.5 A/ms 1000 -diF/dt 2.5 50 2.0 40 160 1.5 30 0.5 120 0.0 80 0 50 100 °C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 20 1.0 10 0.5 0 0 400 0.0 800 1200 A/ms diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJS calculation: 0.25 K/W i 0.20 1 2 3 4 0.15 ZthJS thJH Rthi (K/W) ti (s) 0.002 0.008 0.054 0.164 0.08 0.024 0.112 0.464 0.10 0.05 0.00 0.001 0.01 0.1 Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 1s 10 t 2-2