IXYS MEA250-12DA

MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
Fast Recovery
Epitaxial Diode
(FRED) Module
VRRM = 1200 V
IFAVM = 260 A
trr
= 450 ns
Preliminary data
2
VRSM
VRRM
V
V
1200
1200
Type
MEA 250-12DA
1
2
3
1
MEK 250-12DA
3
1
2
MEE 250-012DA
3
1
2
3
Symbol
Test Conditions
IFRMS
IFAVM ÿÿ①
IFRM
TC = 75°C
TC = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
Maximum Ratings
367
260
1480
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2400
2640
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2160
2380
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
28800
29300
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
23300
23800
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
875
W
3000
3600
V~
V~
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
●
●
●
●
●
●
TVJ = 45°C;
TVJ
Tstg
TSmax
Ptot
Tc = 25°C
VISOL
50/60 Hz, RMS t = 1 min
t=1s
IISOL £ 1 mA
Md
Mounting torque (M6)
Terminal connection torque (M6)
dS
dA
a
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
Weight
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
VF
IF = 150 A;
TVJ
TVJ
TVJ
TVJ
●
●
●
For power-loss calculations only
RthJH
RthJC
DC current
DC current
IF = 300 A
VR= 600 V
-di/dt = 400 A/ms
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
450
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
●
mm
mm
m/s2
●
150
g
●
12
3
60
= 125°C
= 25°C
= 125°C
= 25°C
●
12.7
9.6
50
Characteristic Values (per diode)
typ.
max.
VT0
rT
trr
IRM
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
IF = 260 A;
●
Dimensions in mm (1 mm = 0.0394")
mA
mA
mA
1.38
1.69
1.54
1.80
V
V
V
V
1.16
1.46
V
mW
0.228
0.143
K/W
K/W
500
55
83
●
ns
A
A
749
I2t
1-2
MEA 250-12 DA MEE 250-12 DA
MEK 250-12 DA
80
µC TVJ= 100°C
70 VR = 600V
500
A
450
400
200
A TVJ= 100°C
180 VR = 600V
160
IRM
IF= 300A; max.
140 IF= 300A; typ.
IF= 250A; typ.
120 I = 125A; typ.
F
Qr 60
IF= 300A; max.
I = 300A; typ.
50 IF= 250A; typ.
F
I = 125A; typ.
40 F
IF 350
300
TVJ=125°C
TVJ= 25°C
250
200
100
80
30
60
150
20
40
100
10
50
0
0.0
0.5
1.0
2.0 V 2.5
1.5
20
0
100
A/ms 1000
-diF/dt
VF
Fig. 1 Forward current IF versus
voltage drop VF per leg
1.4
400
ms 1000
600 A/
800
-diF/dt
1200
100
A
V
90
TVJ= 100°C
VR = 600V
1.0
IF= 300A; max.
IF= 300A; typ.
IF= 250A; typ.
IF= 125A; typ.
800
600
IRM
TVJ= 125°C
IF = 260A
80
trr
0.8
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
1000
Kf
0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
ns
1.2
0
VFR
70
400
Qr
0.4
200
0.2
0
µs
2.0
tfr
VFR
tfr
60
1.5
50
40
0.6
2.5
1.0
30
20
0.5
10
0
40
80
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
600 A/
800
ms 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
0
400
0.0
800
1200 A/ms
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJS calculation:
0.25
K/W
i
0.20
1
2
3
4
ZthJS
thJH
0.15
Rthi (K/W)
ti (s)
0.002
0.008
0.054
0.164
0.08
0.024
0.112
0.464
0.10
0.05
0.00
0.001
0.01
0.1
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
1s
10
t
2-2