IXYS MLO110

MMO 110
MLO 110
IRMS = 112 A
VRRM = 800-1400 V
AC Controller Modules
Preliminary Data
VRRM
VDRM
V
V
800
1200
1400
800
1200
1400
MMO
Type
A
(W1C)
I/H
MMO 110-08io7
MMO 110-12io7
MMO 110-14io7
MLO 110-08io7
MLO 110-12io7
MLO 110-14io7
G/F
N
A
MLO
(W1H)
G/F
I/H
Symbol
Conditions
Maximum Ratings
IRMS
ITRMS
ITAVM
TC = 85°C, 50 - 400 Hz, module
ITSM
TVJ = 45°C
VR = 0
112
81
51
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1070
A
A
TVJ = 125°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
870
930
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5000
4810
A2s
A2s
TVJ = 125°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
3780
3630
A2s
A2s
100
A/µs
500
A/µs
1000
V/µs
10
5
W
W
PGAVM
0.5
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
2500
3000
V~
V~
I2t
(di/dt)cr
TC = 85°C; (180° sine)
TVJ = 125°C
repetitive, IT = 50 A
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A
non repetitive, IT = ITAVM
diG/dt = 0.45 A/µs
(dv/dt)cr
TVJ = 125°C; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGM
TVJ = 125°C
IT = ITAVM
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque (M4)
Weight
typ.
tp = 30 µs
tp = 300 µs
t = 1 min
t=1s
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
• Lead suitable for PC board solering
Applications
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
1.5...2.0/14...18 Nm/lb.in.
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
1-2
Features
18
g
241
VRSM
VDSM
© 2002 IXYS All rights reserved
MMO 110
MLO 110
Symbol
Conditions
Characteristic Values
ID , IR
TVJ = 125°C; VR = VRRM; VD = VDRM
≤
5
mA
VT
IT
≤
1.57
V
VT0
rT
For power-loss calculations only
0.85
5.6
V
mΩ
VGT
VD = 6 V
1.5
1.9
V
V
= 150 A; TVJ = 25°C
TVJ = 25°C
TVJ = -40°C
≤
≤
TVJ = 25°C
TVJ = -40°C
≤
≤
100
200
mA
mA
IGT
VD = 6 V
VGD
IGD
TVJ = 125°C; VD = 2/3 VDRM
≤
≤
0.2
1
V
mA
IL
TVJ = 25°C; tP = 10 µs
IG = 0.45 A; diG/dt = 0.45 A/µs
≤
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
100
mA
tgd
TVJ = 25°C; VD = ½ VDRM
IG = 0.45 A; diG/dt = 0.45 A/µs
≤
2
µs
RthJC
per thyristor; DC
per module
0.8
0.4
K/W
K/W
0.12
0.06
K/W
K/W
11.2
17.0
50
mm
mm
m/s2
RthCH
dS
dA
a
per thyristor; sine 180° el
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Dimensions in mm (1 mm = 0.0394")
typ.
typ.
10
1: IGT, TVJ = 125°C
V
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
3
2
1
5
6
1
4
4: PGAV = 0.5 W
5: PGM =
IGD, TVJ = 125°C
0.1
100
101
5W
6: PGM = 10 W
102
103
IG
mA 104
Fig. 1 Gate trigger characteristics
1000
TVJ = 25°C
µs
tgd
typ.
100
Limit
10
1
10
mA
100
1000
IG
Fig. 2 Gate trigger delay time
© 2002 IXYS All rights reserved
2-2