MMO 110 MLO 110 IRMS = 112 A VRRM = 800-1400 V AC Controller Modules Preliminary Data VRRM VDRM V V 800 1200 1400 800 1200 1400 MMO Type A (W1C) I/H MMO 110-08io7 MMO 110-12io7 MMO 110-14io7 MLO 110-08io7 MLO 110-12io7 MLO 110-14io7 G/F N A MLO (W1H) G/F I/H Symbol Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 85°C, 50 - 400 Hz, module ITSM TVJ = 45°C VR = 0 112 81 51 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 A A TVJ = 125°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 870 930 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4810 A2s A2s TVJ = 125°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 3780 3630 A2s A2s 100 A/µs 500 A/µs 1000 V/µs 10 5 W W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ I2t (di/dt)cr TC = 85°C; (180° sine) TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs (dv/dt)cr TVJ = 125°C; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = 125°C IT = ITAVM VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) Weight typ. tp = 30 µs tp = 300 µs t = 1 min t=1s • Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency • Isolation voltage 3000 V~ • Planar glass passivated chips • Low forward voltage drop • Lead suitable for PC board solering Applications • Switching and control of single and three phase AC circuits • Light and temperature control • Softstart AC motor controller • Solid state switches Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling • High power density • Small and light weight 1.5...2.0/14...18 Nm/lb.in. Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 1-2 Features 18 g 241 VRSM VDSM © 2002 IXYS All rights reserved MMO 110 MLO 110 Symbol Conditions Characteristic Values ID , IR TVJ = 125°C; VR = VRRM; VD = VDRM ≤ 5 mA VT IT ≤ 1.57 V VT0 rT For power-loss calculations only 0.85 5.6 V mΩ VGT VD = 6 V 1.5 1.9 V V = 150 A; TVJ = 25°C TVJ = 25°C TVJ = -40°C ≤ ≤ TVJ = 25°C TVJ = -40°C ≤ ≤ 100 200 mA mA IGT VD = 6 V VGD IGD TVJ = 125°C; VD = 2/3 VDRM ≤ ≤ 0.2 1 V mA IL TVJ = 25°C; tP = 10 µs IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 2 µs RthJC per thyristor; DC per module 0.8 0.4 K/W K/W 0.12 0.06 K/W K/W 11.2 17.0 50 mm mm m/s2 RthCH dS dA a per thyristor; sine 180° el per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Dimensions in mm (1 mm = 0.0394") typ. typ. 10 1: IGT, TVJ = 125°C V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 2 1 5 6 1 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 1 Gate trigger characteristics 1000 TVJ = 25°C µs tgd typ. 100 Limit 10 1 10 mA 100 1000 IG Fig. 2 Gate trigger delay time © 2002 IXYS All rights reserved 2-2