VGO 36 Single Phase Rectifier Bridge IdAV = 36 A VRRM = 800-1600 V Preliminary data VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 H N Test Conditions IdAV ① IdAVM ① IFRMS, ITRMS TH = 85°C, module module per leg IFSM, ITSM TVJ = 45°C; VR = 0 V (di/dt)cr (dv/dt)cr G D VGO 36-08io7 VGO 36-12io7 VGO 36-14io7 VGO 36-16io7 Symbol I2t Maximum Ratings 36 40 31 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 350 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 280 310 A A TVJ = 45°C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 520 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 390 400 A2s A2s 150 A/ms TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/2 • IdAV diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M4) Weight typ. t = 1 min t=1s Features • Package with DCB ceramic base plate • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • • • • Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages VRGM PGM K A Type 500 A/ms 1000 V/ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 °C °C °C 2500 3000 V~ V~ £ £ £ 1.5 - 2 14 - 18 18 • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight Nm lb.in. g 002 Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated ① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VGO 36 Symbol Test Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VT, VF IT, IF = 45 A; TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) TVJ = TVJM TVJ = 25°C £ £ 5 0.3 mA mA £ 1.45 V 0.85 13 V mW VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C TVJ = 125°C £ £ £ £ £ 1.0 1.2 65 80 50 V V mA mA mA TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM £ £ 0.2 5 V mA VGT VD = 6 V; IGT VGD IGD IL IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms; £ £ £ 150 200 100 mA mA mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms £ 2 ms tq TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM typ. 150 ms RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 1.4 0.35 2.0 0.5 K/W K/W K/W K/W Creepage distance on surface Creepage distance in air Max. allowable acceleration 12.6 6.3 50 mm mm m/s2 RthJK dS dA a TVJ = 25°C TVJ = -40°C TVJ = 125°C 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V VG 1 1 3 6 4 0.1 1 10 5 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125°C 100 1000 IG mA Fig. 1 Gate trigger range 1000 TVJ = 25°C µs tgd 100 typ. Limit 10 1 10 Dimensions in mm (1 mm = 0.0394") 2 100 mA 1000 IG 002 Fig. 2 Gate controlled delay time tgd © 2000 IXYS All rights reserved 2-2