IXYS VGO36

VGO 36
Single Phase Rectifier Bridge
IdAV = 36 A
VRRM = 800-1600 V
Preliminary data
VRSM
VDSM
VRRM
VDRM
V
V
900
1300
1500
1700
800
1200
1400
1600
H
N
Test Conditions
IdAV ①
IdAVM ①
IFRMS, ITRMS
TH = 85°C, module
module
per leg
IFSM, ITSM
TVJ = 45°C;
VR = 0 V
(di/dt)cr
(dv/dt)cr
G
D
VGO 36-08io7
VGO 36-12io7
VGO 36-14io7
VGO 36-16io7
Symbol
I2t
Maximum Ratings
36
40
31
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
320
350
A
A
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
280
310
A
A
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
520
A2s
A2s
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
390
400
A2s
A2s
150
A/ms
TVJ = 125°C
repetitive, IT = 50 A
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG = 0.3 A,
non repetitive, IT = 1/2 • IdAV
diG/dt = 0.3 A/ms
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
tp = 30 ms
tp = 500 ms
tp = 10 ms
PGAVM
TVJ
TVJM
Tstg
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque (M4)
Weight
typ.
t = 1 min
t=1s
Features
• Package with DCB ceramic
base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
•
•
•
•
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
VRGM
PGM
K
A
Type
500
A/ms
1000
V/ms
10
V
10
5
1
0.5
W
W
W
W
-40...+125
125
-40...+125
°C
°C
°C
2500
3000
V~
V~
£
£
£
1.5 - 2
14 - 18
18
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Nm
lb.in.
g
002
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
VGO 36
Symbol
Test Conditions
Characteristic Values
IR, ID
VR = VRRM; VD = VDRM
VT, VF
IT, IF = 45 A; TVJ = 25°C
VT0
rT
For power-loss calculations only (TVJ = 125°C)
TVJ = TVJM
TVJ = 25°C
£
£
5
0.3
mA
mA
£
1.45
V
0.85
13
V
mW
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
£
£
£
£
£
1.0
1.2
65
80
50
V
V
mA
mA
mA
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
£
£
0.2
5
V
mA
VGT
VD = 6 V;
IGT
VGD
IGD
IL
IG = 0.3 A; tG = 30 ms;
diG/dt = 0.3 A/ms;
£
£
£
150
200
100
mA
mA
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
100
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.3 A; diG/dt = 0.3 A/ms
£
2
ms
tq
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V
di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM
typ.
150
ms
RthJC
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
1.4
0.35
2.0
0.5
K/W
K/W
K/W
K/W
Creepage distance on surface
Creepage distance in air
Max. allowable acceleration
12.6
6.3
50
mm
mm
m/s2
RthJK
dS
dA
a
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
VG
1
1
3
6
4
0.1
1
10
5
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
100
1000
IG
mA
Fig. 1 Gate trigger range
1000
TVJ = 25°C
µs
tgd
100
typ.
Limit
10
1
10
Dimensions in mm (1 mm = 0.0394")
2
100
mA 1000
IG
002
Fig. 2 Gate controlled delay time tgd
© 2000 IXYS All rights reserved
2-2