VUI 30-12 N1 Advanced Technical Information Rectifier Module for Three Phase Power Factor Correction Typical Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~; fT = 15 kHz; TC = 80°C Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Symbol Conditions VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 1200 V ± 20 V 95 65 A A 100 VCES A 10 µs Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.7 1.9 4.5 2.0 V V 6.5 V 1.6 mA mA 400 nA 1.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 22 Ω 100 70 500 70 3.0 2.2 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 50 A 3.3 240 nF nC RthJC RthJH with heatsink transfer paste 0.6 0.3 K/W K/W td(on) tr td(off) tf Eon Eoff • NPT IGBT with low saturation voltage • fast recovery epitaxial diodes (FRED) • module package: - high level of integration solder terminals for PCB mounting isolated DCB ceramic base plate large creepage and strike distances Applications Three phase rectifier with power factor correction, set up as follows: • input from three phase mains - wide range of input voltage - mains currents approximately sinusoidal in phase with mains voltage - topology permits to control overcurrent such as in case of input voltage peaks • output - direct current link - buck type converter - reduced output voltage - possibility to supply boost converter, inverter etc. • required components - one power semiconductor module per phase - one inductor and one capacitor per phase on mains side - output inductor, depending on supplied circuit 106 Transistor T IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 Advanced Technical Information VUI 30-12 N1 Diodes D1 - D4 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 Maximum Ratings 1200 V TC = 25°C TC = 80°C 40 25 A A Symbol Conditions Characteristic Values min. typ. max. VF IF = 20 A; TVJ = 25°C TVJ = 125°C IR VR = VRRM; TVJ = 25°C VR = 0.8VRRM; TVJ = 125°C IRM t rr RthJC RthJH 2.2 1.9 IF = 30A; diF/dt = -250 A/µs; TVJ = 125°C VR = 540 V with heat transfer paste 2.4 V V 0.75 2 mA mA 16 400 A ns 2.6 1.3 K/W K/W Module Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M5) Symbol Conditions dA, dS Weight -40...+150 -40...+125 °C °C 3600 V~ 2 - 2.5 Nm Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 5 mm 35 g 106 Dimensions in mm (1 mm = 0.0394") © 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 2-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670