VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM IFSM 1200 1600 V V TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz 40 110 530 A A A Ptot TC = 25°C 100 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 25 A; TVJ = 25°C TVJ = 125°C 1.0 0.9 IR VR = VRRM; TVJ = 25°C VR = 0.8 • VRRM; TVJ = 125°C 0.4 RthJC RthJH 9 10 per diode with heat transfer paste 1.1 V V 0.02 mA mA • three phase mains rectifier • brake chopper: - IGBT with low saturation voltage - HiPerFREDTM free wheeling diode • module package: - high level of integration - solder terminals for PCB mounting - UL registered E72873 - isolated DCB ceramic base plate - large creepage and strike distances - high reliability Applications drives with • mains input • DC link • inverter or chopper feeding the machine • motor and generator/brake operation 1.2 K/W 1.42 K/W Chopper Diode D Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 DC; TC = 25°C DC; TC = 80°C Symbol Conditions VF IF = 25 A; TVJ = 25°C TVJ = 125°C IR VR = VRRM; RthJC RthJH 1200 V 25 15 A A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C IF = 15A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2.7 2.0 3.1 V V 0.1 0.1 mA mA 16 130 A ns 2.3 K/W 3.12 K/W 340 IRM trr Maximum Ratings 1-4 VUB 72 Chopper Transistor T Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 DC; TC = 25°C DC; TC = 80°C 50 35 A A ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA; L = 100 µH 50 A tSC (SCSOA) VGE = ±15 V; VCE = 900 V; TVJ = 125°C RG = 39 Ω; non repetitive VCES Symbol Conditions (TVJ = 25°C, unless otherwise specified) µs Characteristic Values min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 10 1.9 2.1 4.5 2.4 V V 6.5 V 0.1 mA mA 200 nA 0.1 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 Ω 80 50 440 50 3.8 2.0 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 35 A 2.0 150 nF nC RthJC RthJH with heat transfer paste, see mounting instructions td(on) tr td(off) tf Eon Eoff Conduction D1 - D6 Diode (typ. at TJ = 125°C) V0 = 0.85 V; R0 = 7 mΩ T/D IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.0 V; R0 = 45 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.25 V; R0 = 32 mΩ Dimensions in mm (1 mm = 0.0394") 0.6 K/W 1.2 K/W Temperature Sensor NTC Symbol Conditions R25 B25/100 T = 25°C Characteristic Values typ. ( 1T R(T) = R25 • e B25/100 1 298K ) 2.2 100 kΩ K Module Conditions IRMS per pin TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M5) Symbol Conditions dA, dS Weight © 2003 IXYS All rights reserved Maximum Ratings 100 A -40...+150 -40...+125 °C °C 3600 V~ 2 - 2.5 Nm Characteristic Values min. typ. max. 5 mm 35 g 340 Symbol 2-4 VUB 72 Input Rectifier D1-D6 80 500 A A 70 typ. 400 60 IF IFSM TVJ= 25°C 50 VR= 0.8VRRM 300 TVJ=150°C TVJ= 45°C 40 max. 200 30 20 100 10 TVJ= 150°C 0 0.0 0.5 1.0 VF 0 0.001 1.5 V 2.0 0.01 0.1 t Fig. 1 Forward current versus voltage drop per rectifier diode s 1 Fig. 2 Surge overload current per rectifier diode 10000 80 VR= 0 V A 70 A2s 60 Id(AV)M 50 1000 TVJ= 45°C I2t 40 TVJ= 150°C 30 100 20 10 10 0 0 40 80 TH 1 120 °C 160 Fig. 3 Maximum forward current versus heatsink temperature (Rectifier bridge) 10 Fig. 4 I2t versus time per rectifier diode 140 W 120 RthHA [K/W] 0.5 1 1.5 2 3 4 6 100 Ptot ms t 80 60 Note: transient thermal impedance see next page 40 20 0 10 20 30 Id(AV)M Fig. 5 40 50 60 A 0 70 40 80 120 °C 160 TA Power dissipation versus direct output current and ambient temperature (Rectifier bridge) © 2003 IXYS All rights reserved 340 0 3-4 VUB 72 Chopper T - D 120 50 VGE = 15 V A A 100 IC TVJ = 25°C IF 80 TVJ = 125°C 40 TVJ = 125°C 30 60 20 40 TVJ = 25°C 10 20 0 0 0 1 2 3 4 5 0 6 V 7 1 2 3 Fig. 6 Typ. IGBT output characteristics 6 VCE = 600 V VGE = ±15 V mJ Eoff RG = 39 Ω TVJ = 125°C Eoff 4 V 4 VF VCE Fig. 7 Typ. forward characteristics of free wheeling diode 1200 ns 1000 800 4 mJ t Eoff 800 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C 3 ns 600 t Eoff 600 td(off) 2 2 400 400 td(off) 1 200 200 tf 0 0 20 40 60 0 tf 0 A 80 10 20 30 40 50 0 70 Ω 80 60 IC RG Fig. 8 Typ. IGBT turn off energy and switching times versus collector current Fig. 9 Typ. IGBT turn off energy and switching times versus gate resistor 10 Temperature Sensor NTC K/W 2300 1 ZthJC chopper diode rectifier diode IGBT 0.1 0.01 2200 R Ω 2100 2000 0.001 single pulse 1900 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 10 Typ. transient thermal impedance © 2003 IXYS All rights reserved 0 25 50 75 100 125 °C 150 T Fig. 11 Typ. thermistorresistance versus temperature 340 0.0001 4-4