VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads IFSM I2t Rectifier Diodes Symbol Maximum Ratings 1200 / 1600 59 70 V A A Features TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V 530 475 A A ● TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0V 1400 1130 A A ● ● ● Ptot VCES VGE TH = 80°C per diode 49 W TVJ = 25°C to 150°C Continuous 1200 ± 20 V V IC25 IC70 IC80 TH = 25°C, DC TH = 70°C, DC TH = 80°C, DC 31 23 21 A A A ● ● IGBT ICM tp Ptot TH = 80°C ● = Pulse width limited by TVJM 62 A 70 W 1200 8 12 90 V A A A TVJ = 45°C, t = 10 ms TVJ = 150°C, t = 10 ms 75 60 A A Fast Recovery Diode Ptot TH = 80°C 22 W -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 35 Nm lb.in. g TH = 80°C, rectangular d = 0.5 TH = 80°C, rectangular d = 0.5 TH = 80°C, tP = 10 µs, f = 5 kHz VISOL Module TVJ TVJM Tstg 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 unf) Weight typ. Drive Inverters with brake system Advantages ● ● ● IFSM Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheel diode Convenient package outline UL registered E 72873 Thermistor Applications ● VRRM IFAV IFRMS IFRM 9 10 ● 2 functions in one package No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 VUB 60 Symbol 80 Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. A 70 typ. 60 VR = VRRM, VR = VRRM, TVJ = 25°C TVJ = 150°C 0.1 3 mA mA IF = 25 A, TVJ = 25°C 1.3 V 40 For power-loss calculations only TVJ = 150°C 0.85 V 8.5 mW 30 RthJH per diode 1.42 K/W VBR(CES) VGE(th) VGS = 0 V, IC = 3 mA IC = 10 mA IGES ICES VF VT0 rT Rectifier Diodes Rectifier Diodes IR Test Conditions VGE = ± 20 V 500 nA TVJ = 25°C, VCE = 800 V TVJ = 125°C, VCE = 800 V 250 1 mA mA VCEsat VGE = 15 V, IC = 25 A 3.5 V tSC VGE = 15 V, VCE = 600 V, TVJ = 125°C, RG = 4.7 W, non repetitive 10 ms RBSOA VGE = 15 V, VCE = 800 V, TVJ = 125°C, RG = 4.7 W, Clamped Inductive load, L = 100 mH 50 A Cies VCE = 25 V, f = 1 MHz, VGE = 0 V 2.85 nF VCE = 600 V, IC = 25 A VGE = 15 V, RG = 4.7 W Inductive load; L = 100 mH TVJ = 125°C 100 220 1600 3.5 12 ns ns ns mJ mJ IGBT V V TVJ=150°C 1200 5 20 10 0 0.0 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per rectifier diode 500 VR= 0.8VRRM A 400 IFSM 300 td(on) td(off) tfi Eon Eoff TVJ= 45°C 200 1 K/W RthJH IR TVJ= 25°C 50 max. 7.5 (SCSOA) IF VR VR = VRRM, TVJ = 25°C = 800 V, TVJ =150°C 0.2 6 mA mA IF = 12 A, 2.7 V TVJ= 150°C 100 0 0.001 0.01 0.1 t 1 s Fig. 2 Surge overload current per rectifier diode 10000 VT0 rT IRM trr Fast Recovery Diode VR= 0 V VF TVJ = 25°C For power-loss calculations only TVJ = 150°C = 25 A, -diF/dt = 100 A/ms = 100 V 6.5 7 A IF VR = 1 A, = 30 V 50 70 ns -diF/dt = 100 A/ms 1000 TVJ= 45°C I2t TVJ= 150°C 100 3.12 K/W Module NTC dS dA a 1.65 V 46 mW IF VR RthJH R25 A2s Siemens Typ S 891/2,2k/+9 2.2 kW 10 1 ms 10 t Creep distance on surface Strike distance in air Maximum allowable acceleration © 2000 IXYS All rights reserved 12.7 mm 9.4 mm 50 m/s2 Fig. 3 I2t versus time per rectifier diode 2-4 VUB 60 140 80 W 120 70 A RthHA [K/W] Ptot 60 Id(AV)M 0.5 1 1.5 2 3 4 6 100 80 60 50 40 30 40 20 20 10 0 0 0 10 20 30 40 50 60 A 0 70 40 80 120 °C 160 TA Id(AV)M TVJ = 25°C VGE = 15V A 60 VGE = 13V 1.4 VCE(sat) 1.3 VGE = 9V 0 0 2 4 6 8 10 12 V 14 VCE Fig. 6 Output characteristics for braking (IGBT) 1.5 Eoff norm. IC = 25A 1.0 0.8 0.7 VGE = 15V 0.6 C -50 -25 0 25 50 75 100 125 °150 TVJ Fig. 7 Saturation voltage versus junction temperature normalized (IGBT) 0 10 20 30 IC 40 A 50 1.3 T =125°C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 D=0.1 D=0.2 norm. Eoff D=0.4 1.1 D=0.5 D=0.7 tfi 20 10 0.0 Fig. 8 Turn-off energy per pulse and fall time versus collector current, normalized (IGBT) D=0.3 30 tfi 0.5 IC = 12.5A 50 40 W fi 1.2 norm. 1.1 20 IC 120 °C 160 0.9 VGE = 11V 70 A 60 TTH 2.0 T =125°C Eoff VJ R G = 4.7 t IC = 50A 1.0 40 80 Fig. 5 Maximum forward current versus heatsink temperature (Rectifier bridge) 80 IC 40 H Fig. 4 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) 100 0 1.0 TH = 80°C 0 0.0001 0.9 0.001 0.01 0.1 s 1 tp Fig. 9 Collector current versus pulse width and duty cycle (IGBT) © 2000 IXYS All rights reserved 10 0 20 40 60 RG 80 W 100 Fig.10 Turn-off energy per pulse and fall time versus RG (IGBT) 3-4 VUB 60 100 IC 3.0 40 A 35 A IF 10 2.5 Qrr 30 20 1.5 TVJ=150°C 15 1.0 max. 10 TVJ=125°C W 0.1 0 TVJ=25°C 0 400 1 VFR 80 ms 1.0 ms 4 0.8 TVJ=125°C IF =11A 3 tFR 100 200 300 -diF/dt 1 10 A/ms 400 1 max. IRM IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A 20 15 typ. 10 0.2 5 typ. 0 500 0.0 0 100 200 300 A/ms 400 -diF/dt Fig.15 Recovery time versus -diF/dt (Fast Diode) 1.4 3.5 1.2 K/W 3.0 ZthJH IRM TVJ=100°C VR= 540 V max. tFR 1.0 0 0 100 2.0 0.6 1.5 Fig.16 Peak reverse current versus -diF/dt (Fast Diode) Fast Diode per Rectifier Diode QR 0.4 1.0 0.2 0.5 0 40 80 120 °C 160 0.0 0.001 IGBT 0.01 0.1 1 TVJ Fig.17 Dynamic parameters versus junction temperature (Fast Diode) © 2000 IXYS All rights reserved 200 300 A/ms 400 -diF/dt 2.5 0.8 0.0 100 A/ms 1000 -diF/dt Fig. 13 Recovery charge versus -diF/dt (Fast Diode) 25 0.4 Fig.14 Peak forward voltage and recovery time versus -diF/dt (Fast Diode) Kf 4 30 A 0.6 2 40 0 V TVJ=100°C VR= 540 V trr VFR 20 3 Fig. 12 Forward current versus voltage drop (Fast Diode) 5 60 2 VF 100 V typ. 0.0 0 1200 V 800 VCE Fig.11 Reverse biased safe operation area (IGBT) 0 0.5 5 RG=4.7 IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A 2.0 25 1 TVJ=100°C VR= 540 V mC 10 s 100 t Fig.18 Transient thermal impedance junction to heatsink ZthJH 4-4