SEMICONDUCTOR KIC7WZ02FK TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 2 INPUT NOR GATE FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. B Power down protection is provided on all inputs and outputs. C DIM A B 8 D D A E D 1 5 D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F 4 C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + MARKING Type Name H Z02 G Lot No. US8 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC PIN CONNECTION(TOP VIEW) ) SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~7 V DC Input Voltage VIN -0.5~7 V DC Output Voltage VOUT -0.5~7 V Input Diode Current IIK -50 mA Output Diode Current IOK -50 mA DC Output Current IOUT 50 mA DC VCC/ground Current ICC 100 mA Power Dissipation PD 200 Storage Temperature Range Tstg -55 150 Lead Temperature (10s) TL -55 150 2002. 6. 14 Revision No : 0 1A 1 8 V CC 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A mW 1/4 KIC7WZ02FK Truth Table Logic Diagram A B Y L L H IN A L H L IN B H L L H H L 1 OUT Y Recommended Operating Conditions CHARACTERISTIC SYMBOL VCC Supply Voltage RATING 1.65~5.5 V 1.5~5.5 VIN Input Voltage Topr Operating Temperature dt/dv V 0~5.5 (Note2) 0~VCC (Note3) V -40~85 0~20 (VCC=1.8V Input Rise and Fall Time (Note1) 0~5.5 VOUT Output Voltage UNIT 0.15V, 2.5V 0~10 (VCC=3.3V 0.3V) 0.2V) ns/V 0~5 (VCC=5.5V 0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state 2002. 6. 14 Revision No : 0 2/4 KIC7WZ02FK ELECTRICAL CHARACTERISTICS DC Characteristics TEST CONDITION CHARACTERISTIC High Level Ta=25 SYMBOL VIH - MIN. TYP. MAX. MIN. MAX. 1.65~1.95 0.75 VCC - - 0.75 VCC - - - 0.7 VCC - - 0.25 VCC 2.3~5.5 0.7 VCC VIL 1.65~1.95 - - 0.25 VCC 2.3~5.5 - - 0.3 VCC - 0.3 VCC 1.65 1.55 1.65 - 1.55 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-4mA 1.65 1.29 1.52 - 1.29 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.8 - 2.4 - IOH=-24mA 3.0 2.3 2.68 - 2.3 - IOH=-32mA 4.5 3.8 4.2 - 3.8 - 1.8 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 - IOH=-100 A High Level VOH VIN= VIL Output Voltage IOH=100 A Low Level VOL VIN=VIH UNIT VCC(V) Input Voltage Low Level Ta=-40~85 4.5 - 0 0.1 - 0.1 IOH=4mA 1.65 - 0.08 0.24 - 0.24 IOH=8mA 2.3 - 0.1 0.3 - 0.3 IOH=16mA 3.0 - 0.15 0.4 - 0.4 IOH=24mA 3.0 - 0.22 0.55 - 0.55 IOH=32mA 0.55 - 0.55 V V V 4.5 - 0.22 Input Leakage Current IIN VIN=5.5V or GND 0~5.5 - - 0.1 - Power Off Leakage Current IOFF VIN or VOUT=5.5V 0.0 - - 1 - 10 A Quiescent Supply Current ICC VIN=5.5V or GND 1.65~5.5 - - 1 - 10 A 10 A AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) TEST CONDITION CHARACTERISTIC Ta=25 SYMBOL VCC(V) Propagation delay time CL=15pF, RL=1M CL=50pF, RL=500 Input Capacitance CIN Power Dissipation Capacitance CPD (Note) UNIT MIN. TYP. MAX. MIN. 0.15 2.0 5.4 9.8 2.0 10 2.5 0.2 1.2 3.3 5.4 1.2 5.8 3.3 0.3 0.8 2.5 3.8 0.8 4.1 5.0 0.5 0.5 2.0 3.0 0.5 3.3 3.3 0.3 1.2 3.1 4.6 1.2 5.0 5.0 0.5 0.8 2.4 3.7 0.8 4.0 0 - 2.5 - - - 3.3 - 13.5 - - - 5.5 - 17.5 - - - 1.8 tPLH tPHL Ta=-40~85 MAX. ns ns pF pF Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+(ICCstatic) 2002. 6. 14 Revision No : 0 3/4 KIC7WZ02FK AC Loading and Waveforms VCC VCC A INPUT OUTPUT CL INPUT RL CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns Input=AC Waveform ; t r =tf =1.8ns PRR=10MHz ; Duty Cycle=50% FIGURE 1. AC Test Circuit t r =3ns FIGURE 2. ICCD Test Circuit t f =3ns 90% 50% 10% INPUT tw VCC GND t PLH t PHL VOH OUTPUT 50% 50% VOL FIGURE 3. AC Waveforms 2002. 6. 14 Revision No : 0 4/4