SEMICONDUCTOR KIC7SZ32FU TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 2 INPUT OR GATE FEATURES B ・High Output Drive : ±24mA (Typ.) @VCC=3V B1 ・Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF 5 1 A 2 C ・Supply Voltage Data Retention : VCC=1.5~5.5V. A1 C ・Operation Voltage Range : VCC(opr)=1.8~5.5V. D 4 3 H ・5V Tolerant Function T DIM A A1 B B1 C D G H T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G USV MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Range VCC -0.5~6 V DC Input Voltage VIN -0.5~6 V DC Output Voltage VOUT -0.5~6 V Input Diode Current IIK ±20 mA Output Diode Current IOK ±20 mA DC Output Current IOUT ±50 mA DC VCC/Ground Current ICC ±50 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65~150 ℃ Lead Temperature (10s) TL 260 ℃ MARKING Lot No. TG Type Name PIN CONNECTION (TOP VIEW) 2008. 9. 17 Revision No : 2 VCC OUT Y 5 4 1 2 3 IN B IN A GND 1/3 KIC7SZ32FU LOGIC DIAGRAM IN A IN B 1 OUT Y DC ELECTRICAL CHARACTERISTICS Ta=25℃ CHARACTERISTIC High-Level Input Voltage Low-Level Input Voltage SYMBOL Ta=-40~85℃ TEST CONDITION VIH UNIT VCC (V) MIN. TYP. MAX. MIN. MAX. 1.8 0.88 ×VCC - - 0.88 ×VCC - 2.3~ 5.5 0.75 ×VCC - - 0.75 ×VCC - 1.8 - - 0.12 ×VCC - 0.12 ×VCC - 0.25 ×VCC - VIL - V 2.3~ 5.5 - - 0.25 ×VCC 1.8 1.7 1.8 - 1.7 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.8 - 2.4 - IOH=-24mA 3.0 2.3 2.68 - 2.3 - IOH=-32mA 4.5 3.8 4.2 - 3.8 - 1.8 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 IOL=8mA 2.3 - 0.1 0.3 - 0.3 IOL=16mA 3.0 - 0.15 0.4 - 0.4 IOL=24mA 3.0 - 0.22 0.55 - 0.55 IOL=32mA 4.5 - 0.22 0.55 - 0.55 V IOH=-100μA High-Level Output Voltage VOH VIN=VIH or VIL V IOL=100μA Low-Level Output Voltage VOL VIN=VIH or VIL V Input Leakage Current IIN VIN=5.5V or GND 0~5.5 - - ±1 - ±10 Quiescent Supply Current ICC VIN=VCC or GND 5.5 - - 2 - 20 μA 2008. 9. 17 Revision No : 2 2/3 KIC7SZ32FU AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns) CHARACTERISTIC SYMBOL tPLH tPHL Propagation Delay Time TEST CONDITION CL=15pF, RL=1MΩ CIN Power Dissipation Capacitance CPD Ta=-40~85℃ UNIT VCC (V) MIN. TYP. MAX. MIN. MAX. 1.8 2.0 4.6 10.0 2.0 10.5 2.5±0.2 0.8 3.0 7.0 0.8 7.5 3.3±0.3 0.5 2.4 4.7 0.5 5.0 5.0±0.5 0.5 1.9 4.1 0.5 4.4 3.3±0.3 1.5 3.0 5.2 1.5 5.5 5.0±0.5 0.8 2.4 4.5 0.8 4.8 0~5.5 - 4 - - - 3.3 - 20 - - - 3.5 - 26 - - - ns CL=50pF, RL=500Ω Input Capacitance Ta=25℃ - pF (Note1) Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD・VCC・fIN+ICC 2008. 9. 17 Revision No : 2 3/3