SEMICONDUCTOR KIC7WZ38FK TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT DUAL 2 INPUT NAND GATE (OPEN DRAIN) FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpZL 2.2ns(typ.) @VCC=5V, 50pF. B Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : 200V or more (EIAJ) 1 A E D 2000V or more (MIL) DIM A B 8 Power down protection is provided on all inputs and outputs. D D ESD performance : C 500mA or more 5 D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F 4 C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + MARKING Type Name H Z38 G Lot No. US8 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC PIN CONNECTION(TOP VIEW) ) SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~6 V DC Input Voltage VIN -0.5~6 V DC Output Voltage VOUT -0.5~6 V Input Diode Current IIK -20 mA Output Diode Current IOK -20 mA DC Output Current IOUT 50 mA DC VCC/ground Current ICC 50 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -65 150 Lead Temperature (10s) TL 260 2002. 3. 7 Revision No : 1 1A 1 8 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A VCC 1/3 KIC7WZ38FK Truth Table Logic Diagram A B Y L L H* L H H* H L H* H H L IN A & IN B OUT Y * : High impedance Recommended Operating Conditions CHARACTERISTIC SYMBOL Supply Voltage VCC Input Voltage VIN RATING 1.65~5.5 1.5~5.5 Topr Operating Temperature V (Note1) 0~5.5 VOUT Output Voltage UNIT V 0~5.5 (Note2) 0~VCC (Note3) V -40~85 0~20 (VCC=1.8V 0.15V, 2.5V dt/dv Input Rise and Fall Time 0.2V) ns/V 0~10 (VCC=3.3V 0.3V) 0~5 (VCC=5.5V 0.5V)5 Note1 : Data retention only, Note2 : VCC=0V, Note3 : Low state ELECTRICAL CHARACTERISTICS DC Characteristics TEST CONDITION CHARACTERISTIC High Level VIH - Low Level VIL Low Level VOL TYP. MAX. MIN. MAX. 1.65~1.95 0.75 VCC - - 0.75 VCC - - - - 0.25 VCC VCC 0.7 VCC V 0.25 VCC 2.3~5.5 - - 1.65 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 IOH=4mA 1.65 - 0.08 0.24 - 0.24 IOH=8mA 2.3 - 0.1 0.3 - 0.3 IOH=16mA 3.0 - 0.15 0.4 - 0.4 IOH=24mA 3.0 - 0.22 0.55 - 0.55 IOH=32mA 4.5 - 0.22 0.55 - 0.55 0.3 VCC - - - - VIN=VIL UNIT MIN. 1.65~1.95 IOH=100 A Voltage Ta=-40~85 VCC(V) 2.3~5.5 0.7 Input Voltage Output Ta=25 SYMBOL - 0.3 VCC V Input Leakage Current IIN VIN=5.5V or GND 0~5.5 - - 1 - 10 A Off-state Carrent IOZ VIN=VIL, VOUT=VCC or GND 5.5 - - 5 - 10 A Power Off Leakage Current IOFF VIN or VOUT=5.5V 0.0 - - 1 - 10 A Quiescent Supply Current ICC VIN=5.5V or GND 1.65~5.5 - - 1 - 10 A 2002. 3. 7 Revision No : 1 2/3 KIC7WZ38FK AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) CHARACTERISTIC TEST CONDITION SYMBOL Ta=25 VCC(V) MIN. TYP. MAX. MIN. MAX. 0.15 2.0 5.2 9.2 2.0 9.6 2.5 0.2 1.5 3.5 5.7 1.5 6.1 3.3 0.3 1.0 2.8 4.1 1.0 4.5 5.0 0.5 0.5 2.2 3.4 0.5 3.6 1.8 0.15 2.0 4.6 9.2 2.0 9.6 2.5 0.2 1.5 3.2 5.7 1.5 6.1 3.3 0.3 1.0 2.4 4.1 1.0 4.5 1.8 tPZL CL=50pF, RL=500 Propagation delay time tPLZ Input Capacitance Output Capacitance Power Dissipation Capacitance CL=50pF, RL=500 Ta=-40~85 UNIT ns ns 5.0 0.5 0.5 1.6 3.4 0.5 3.6 CIN - 0~5.5 - 3.0 - - - pF COUT - 0~5.5 - 2.5 - - - pF 3.3 - 6.9 - - - 5.5 - 13 - - - CPD (Note) pF Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+ICC/2 TEST CIRCUIT AC Waveform t r 3ns t r 3ns VCC x 2 RL MEASURE OUTPUT CL RL 50% 10% INPUT VOH t pZL Revision No : 1 GND OUTPUT 50% 2002. 3. 7 V CC 90% 50% V OL + 0.3V t pLZ VOL 3/3