INFRA-RED EMITTING DIODES AM2520F3C03 AM2520SF4C03 Features zSUBMINIATURE zAVAILABLE PACKAGE STYLE OF INFRA-RED LED. Package Dimensions ON TAPE AND REEL. zCOMPATIBLE WITH AUTOMATIC PLACEMENT EQUIPMENT. zHIGH RELIABILITY AND LONG LIFETIME. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subjected to change without notice. Selection Guide Par t No . Di c e L en s Ty p e AM2520F3C03 GaAs WATER CLEAR AM2520SF4C03 GaAlAs WATER CLEAR Iv (mW/s r ) @20mA *50mA Min. Typ. 2θ1/2 2 6 30° *10 *15 30° 2 4 30° *3 *8 30° Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. AM2520F-1 View in g An g l e Electrical / Optical Characteristics at T)=25°°C Item P/N Sy m b o l Ty p . Max . Un i t Co n d i t i o n Forward Voltage F3 S F4 VF 1.2 1.4 1.5 1.7 V IF=20mA Reverse Current F3 S F4 IR - 10 10 uA VR=5V Junction Capacitance F3 S F4 Co 90 90 - pF V=0 f=1MHz Peak Spectral Wavelength F3 S F4 lR 940 880 - nm IF=20mA Spectral Bandwidth F3 S F4 ∆λ 50 50 - nm IF=20mA Absolute Maximum Ratings at T)=25°°C Item Sy m b o l Max imu m Ratin g Un i t s Power Dissipation Pd 100 mW Forward Current IF 50 mA Peak Forward Current I 1.2 A Reverse Voltage VR 5 V Operating Temperature Topr -45~ +80 °C Storage Temperature Tstg -45~ +80 °C P Note: 1.Ip Condiction : 1/10 Duty Cycle, 0.1ms Pluse Width. AM2520F-2 AM2520F3C03 AM2520SF4C03 AM2520F-3 AM2520F3C03,AM2520SF4C03 SMT Reflow Soldering Instructions AM2520F3C03,AM2520SF4C03 Recommended Soldering Pattern (Units : mm) AM2520F-4 AM2520F3C03,AM2520SF4C03 Tape Specifications (Units : mm) AM2520F-5