LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature S1 G2 G1 -65° to +150°C +150°C D1 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO Drain to Source Voltage 40V -IG(f) Gate Forward Current 10mA -IG Gate Reverse Current 10µA 5 S2 D1 2 D2 G1 6 D2 1 S1 7 G2 S2 22 X 20 MILS Maximum Power Dissipation Device Dissipation @ Free Air - Total 3 BOTTOM VIEW 40mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS830 LS831 LS832 5 10 20 |∆VGS1-2 /∆T| max. Drift vs. Temperature LS833 75 UNITS µV/°C CONDITIONS VDG= 10V ID= 30µA TA= -55°C to +125°C |VGS1-2| max. Offset Voltage 25 25 25 25 mV -IG max Operating 0.1 0.1 0.1 0.5 pA -IG max High Temperature 0.1 0.1 0.1 0.5 nA -IGSS At Full Conduction 0.2 0.2 0.2 1.0 pA -IGSS High Temperature 0.5 0.5 0.5 1.0 nA SYMBOL BVGSS CHARACTERISTICS Breakdown Voltage BVGGO VDG= 10V ID= 30µA TA= +125°C VGS= 0 TA= +125°C VGS= -20V MIN. 40 TYP. 60 MAX. -- UNITS V CONDITIONS VDS= 0 ID= 1nA Gate-to-Gate Breakdown 40 -- -- V IG= 1nA ID= 0 I S= 0 Yfss Yfs TRANSCONDUCTANCE Full Conduction Typical Operation 70 50 300 100 500 200 µmho µmho VDG= 10V VDG= 10V VGS= 0 ID= 30µA f= 1kHz f= 1kHz |Yfs1-2/Yfs| Mismatch -- 1 5 % Full Conduction 60 400 1000 µA VDG= 10V VGS= 0 |IDSS1-2/IDSS| Mismatch at Full Conduction -- 2 5 % VGS(off) or VP VGS GATE VOLTAGE Pinchoff Voltage Operating Range 0.6 -- 2 -- 4.5 4 V V VDS= 10V VDG= 10V ID= 1nA ID= 30µA IGGO GATE CURRENT Gate-to-Gate Leakage -- 1 -- pA VGG= 20V DRAIN CURRENT IDSS Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL YOSS CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction -- -- 5 µmho YOS Operating -- -- 0.5 µmho |YOS1-2| Differential COMMON MODE REJECTION -20 log |∆VGS1-2/∆VDS| -- -- 0.1 µmho -- 90 -- dB -- 90 -- dB ∆VDS= 5 to 10V NF -20 log |∆VGS1-2/∆VDS| NOISE Figure -- -- 1 dB en Voltage -- 20 70 nV/√Hz VDS= 10V f= 100Hz VDG= 10V NBW= 1Hz VGS= 0 RG= 10MΩ NBW= 6Hz ID= 30µA f= 10Hz CISS CAPACITANCE Input -- -- 3 pF VDS= 10V VGS= 0 f= 1MHz CRSS Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz CDD Drain-to-Drain -- -- 0.1 pF VDG= 10V ID= 30µA CMR CMR MIN. TO-71 TYP. MAX. UNITS 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 MAX. 0.040 0.165 0.185 MIN. 0.500 0.016 0.021 DIM. B VGS= 0 VDG= 10V ID= 30µA ∆VDS= 10 to 20V ID= 30µA ID= 30µA 0.320 (8.13) 0.290 (7.37) 0.335 0.370 0.016 0.019 DIM. A VDG= 10V P-DIP TO-78 Six Lead 0.195 DIA. 0.175 CONDITIONS SEATING PLANE 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261