LSK389 - New Jersey Semiconductor

-Conaucto't \Pioaact i, One.
dVs.s.iv
TELEPHONE: (973) 376-2922
(212) 227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
ULTRA LOW NOISE
en = 0.9nV/VHz (typ)
TIGHT MATCHING
IVGsi-2l = 20rnV max
HIGH BREAKDOWN VOLTAGE
BVGss = 40V max
HIGH GAIN
G(s = 20mS (typ)
LOW CAPACITANCE
Top View
TO-71
25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS1
SOIC-A
S2
T|G2
@ 25 °C (unless otherwise stated)
7]ss
Maximum Temperatures
Storage Temperature
-65to+150°C
Junction Operating Temperature
-55to+135°C
D2o6
] D2
T] S2
Maximum Power Dissipation
G2
Continuous Power Dissipation @ +25°C
400mW
Maximum Currents
Gate Forward Current
lc(F) = 10mA
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
For equivalent single version, see LSK170 family.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
VGSI — VGS^
Differential Gate to Source Cutoff
Voltage
IDSSI
MIN
Gate to Source Saturation Current Ratio
TYP
MAX
UNITS
20
mV
VDS = 10V, l D =1mA
—
VDS = 1 0V, VGS = 0V
0.9
CONDITIONS
IDSS2
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
BVcss
VGS(OFF)
CHARACTERISTIC
MIN
Gate to Source Breakdown Voltage
-40
Gate to Source Pinch-off Voltage
LSK389A
loss
Drain to Source Saturation
Current
TYP
MAX
-0.15
-2
2.6
6.5
LSK389B
6
12
LSK389C
10
20
LSK389D
17
30
UNITS
CONDITIONS
V
VDs = 0, ! D =-100uA
V
VDs = 10V, ! D =0.1uA
mA
IGSS
Gate to Source Leakage Current
-200
pA
VGS = -30V, VDS = 0
IG1G2
Gate to Gate Isolation Current
±1.0
uA
VG1-G2 = ±45V, I D =I S = OA
_ Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
8
20
UNITS
MAX
CONDITIONS
G,s
Full Conduction Transconductance
en
Noise Voltage
0.9
1.9
Nv/VHz
en
Noise Voltage
2.5
4
Nv/VHz
Ciss
Common Source Input Capacitance
25
pF
V D S = 10V, ID = 2mA, f= 1kHz,
NEW =1 Hz
V D s= 10V, ID = 2mA, f= 10Hz,
NBW= 1Hz
Vos=10V, VGS = 0, f=1MHz,
CRSS
Common Source Reverse Transfer Cap.
5.5
pF
VDG = 10V, ID = 0, f=1MHz,
mS
VDS = 10V, VGS = 0, f = 1 kHz
ORDERING INFORMATION
LSK389 - A
-
SOIC-8
/'
\e
loss Range
A
B
C
D
2. 6 -6.5mA
6 - 12 mA
10 - 2 0 m A
17 - 3 0 m A
TO-71
SOIC-8
TO-71 6L
SOIC-A 8L
PACKAGE DIMENSIONS
TO-71
SOIC-A
Six Lead
0.195
0.175
.
'
k—
D,A
u
Q 230
0.209
0.014
°<"s 1
t
0.030
MAX.
.
0.210
0.170
•r
I
CQ21 -L,
*l 1
IUU
i
n n °- i °°
6 LEADS- 1: i! »
0.019 DIA. I
0.016
I
5
rnr
LU-
o
ID
^ITI—
'0,189'
-LLJ
Llk
__
IFI3
in-,° i
m I
-rn
I
^
a.150 It
M|N
100 1
r •""
0.0040
|*»-0.050
L_ Jf
H^X
>\8
IpO*.
L ' XST
0.046 *'
v«OxJ6,y
Z^s/
I
'V
r,
196
L_
0.100-
1
\ '
J- 0,050
•*
0048
0.036
0.028
All dimensions in inches.
O.OQ75
"
0,2440
!
1
0.2284
^
DIMENSIONS IN
INCHES