LINEAR PF5301

LS5301, PF5301
VERY HIGH INPUT IMPEDANCE
N-CHANNEL JFET
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301
HIGH INPUT INPEDANCE
HIGH GAIN
IG = 0.100 pA
gfs = 70 µS
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
LS SERIES
PF SERIES
TO-72
BOTTOM VIEW
TO-92
BOTTOM VIEW
D
Storage Temperature (TO-72)
-65 to 175°C
Storage Temperature (TO-92)
-65 to 150°C
2
3
G
D S G
S
1
4
C
1 2 3
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-30V
Gate to Source
-30V
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
BVGSS
Gate to Source Breakdown Voltage
-30
VGS(off)
Gate to Source Cutoff Voltage
0.6
IGSS
Gate Leakage Current
IG
Gate Operating Current
TYP
MAX
3.0
-1
0.04
UNIT
V
pA
CONDITIONS
VDS = 0V, ID = -1µA
VDS = 10V, ID = 1nA
VDS = 0V, VGS = -15V
VDG = 6V, ID = 5µA
IDSS
Drain to Source Saturation Current
30
500
µA
VDS = 10V, VGS = 0V
gfs
Forward Transconductance
70
300
µS
VDS = 10V, VGS = 0V, f = 1kHz
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
pF
VDS = 10V, VGS = 0V, f = 1MHz
en
Equivalent Noise Voltage
3
1.5
45
150
nV/√Hz
VDG = 10V, ID = 50µA, f = 100Hz
NOTES
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
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