LINEAR SST210

SD-SST210/214
N-CHANNEL LATERAL
DMOS SWITCH
Linear Integrated Systems
Product Summary
Part Number
V(BR)DS Min(V)
VGS(th) Max (V)
rDS(on) Max(Ω)
Crss Max (pF)
tON Max (ns)
SD210DE
30
1.5
45 @ VGS = 10V
0.5
2
SD214DE
20
1.5
45 @ VGS = 10V
0.5
2
SST210
30
1.5
50 @ VGS = 10V
0.5
2
SST214
20
1.5
50 @ VGS = 10V
0.5
2
Features
Benefits
Applications
• Ultra-High Speed Switching—tON: 1 ns
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed rDS @5 V
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and ± voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Top View
SD210DE SD214DE
Top View
SST210 SST214
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V
Gate-Substrate Voltage ......................................................................... ± 30 V
Drain-Source Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Linear Integrated Systems
Source-Substrate Voltage
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 3000C
Storage Temperature .................................................................... -65 to 1500C
Operating Junction Temperature ................................................. -55 to 1250C
Power Dissipationa .................................................................................................................................... 300 mW
Notes:
a. Derate 3 mW/0C above 250C
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Specificationsa
Notes:
a. TA = 250C unless otherwise noted.
b. B is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261